A silicon films deposition in the process of SIF 4 decomposition in pulsed glow discharge; Известия вузовй. Физика; Vol. 55, № 12-3
| Parent link: | Известия вузовй. Физика: научный журнал/ Национальный исследовательский Томский государственный университет.— , 1957- Vol. 55, № 12-3.— 2012.— P. 123-127 |
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| Další autoři: | , , , , , , |
| Shrnutí: | Title screen An experimental study of SiF 4 decomposition process in pulsed glow discharge with grid hollow cathode has been performed. The experiments for SiF 4 decomposition in plasma chemical reactor (gas volume of 5 l) in a mix with hydrogen and without it at working pressures up to 500 Pa were carried out. A dependence of emission spectrum values from different working pressures in different gas mixtures (SiF 4:H 2) has been studied. A silicon film deposition in pulsed glow discharge with grid hollow cathode on dielectric and conductive substrates in the process of SiF4 decomposition was carried out. The analysis of solid film composition was carried out using EDAX -method. It was shown that silicon films deposit on different substrates in pulsed glow discharge with grid hollow cathode in the process of decomposition of SiF 4 under the working pressures up to 500 Pa AM_Agreement |
| Jazyk: | angličtina |
| Vydáno: |
2012
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| Témata: | |
| On-line přístup: | http://elibrary.ru/item.asp?id=20710403 |
| Médium: | MixedMaterials Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646248 |