A silicon films deposition in the process of SIF 4 decomposition in pulsed glow discharge; Известия вузовй. Физика; Vol. 55, № 12-3
| Parent link: | Известия вузовй. Физика: научный журнал/ Национальный исследовательский Томский государственный университет.— , 1957- Vol. 55, № 12-3.— 2012.— P. 123-127 |
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| Andre forfattere: | , , , , , , |
| Summary: | Title screen An experimental study of SiF 4 decomposition process in pulsed glow discharge with grid hollow cathode has been performed. The experiments for SiF 4 decomposition in plasma chemical reactor (gas volume of 5 l) in a mix with hydrogen and without it at working pressures up to 500 Pa were carried out. A dependence of emission spectrum values from different working pressures in different gas mixtures (SiF 4:H 2) has been studied. A silicon film deposition in pulsed glow discharge with grid hollow cathode on dielectric and conductive substrates in the process of SiF4 decomposition was carried out. The analysis of solid film composition was carried out using EDAX -method. It was shown that silicon films deposit on different substrates in pulsed glow discharge with grid hollow cathode in the process of decomposition of SiF 4 under the working pressures up to 500 Pa AM_Agreement |
| Sprog: | engelsk |
| Udgivet: |
2012
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| Fag: | |
| Online adgang: | http://elibrary.ru/item.asp?id=20710403 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646248 |
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| 200 | 1 | |a A silicon films deposition in the process of SIF 4 decomposition in pulsed glow discharge |f V. V. Shugurov [et al.] | |
| 203 | |a Текст |c электронный |b визуальный | ||
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| 300 | |a Title screen | ||
| 320 | |a References: 6 tit | ||
| 330 | |a An experimental study of SiF 4 decomposition process in pulsed glow discharge with grid hollow cathode has been performed. The experiments for SiF 4 decomposition in plasma chemical reactor (gas volume of 5 l) in a mix with hydrogen and without it at working pressures up to 500 Pa were carried out. A dependence of emission spectrum values from different working pressures in different gas mixtures (SiF 4:H 2) has been studied. A silicon film deposition in pulsed glow discharge with grid hollow cathode on dielectric and conductive substrates in the process of SiF4 decomposition was carried out. The analysis of solid film composition was carried out using EDAX -method. It was shown that silicon films deposit on different substrates in pulsed glow discharge with grid hollow cathode in the process of decomposition of SiF 4 under the working pressures up to 500 Pa | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Известия вузовй. Физика |f Национальный исследовательский Томский государственный университет |o научный журнал |d 1957- | |
| 463 | 1 | |t Vol. 55, № 12-3 |v P. 123-127 |d 2012 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a тлеющий разряд | |
| 610 | 1 | |a silicon film | |
| 610 | 1 | |a плазма | |
| 701 | 1 | |a Shugurov |b V. V. |c physicist |c Researcher of Tomsk Polytechnic University |f 1981- |g Vladimir Viktorovich |9 20304 | |
| 701 | 1 | |a Denisov |b V. V. | |
| 701 | 1 | |a Kalushevich |b A. A. | |
| 701 | 1 | |a Yakovlev |b V. V. | |
| 701 | 1 | |a Vorobjev (Vorobyov) |b M. S. |c specialist in the field of electronics |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1986- |g Maksim Sergeevich |9 89110 | |
| 701 | 1 | |a Suslov |b A. I. | |
| 701 | 1 | |a Koval |b N. N. |c specialist in the field of electronics |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Nikolay Nikolaevich |3 (RuTPU)RU\TPU\pers\34748 |9 18098 | |
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