A silicon films deposition in the process of SIF 4 decomposition in pulsed glow discharge; Известия вузовй. Физика; Vol. 55, № 12-3

Bibliografiske detaljer
Parent link:Известия вузовй. Физика: научный журнал/ Национальный исследовательский Томский государственный университет.— , 1957-
Vol. 55, № 12-3.— 2012.— P. 123-127
Andre forfattere: Shugurov V. V. Vladimir Viktorovich, Denisov V. V., Kalushevich A. A., Yakovlev V. V., Vorobjev (Vorobyov) M. S. Maksim Sergeevich, Suslov A. I., Koval N. N. Nikolay Nikolaevich
Summary:Title screen
An experimental study of SiF 4 decomposition process in pulsed glow discharge with grid hollow cathode has been performed. The experiments for SiF 4 decomposition in plasma chemical reactor (gas volume of 5 l) in a mix with hydrogen and without it at working pressures up to 500 Pa were carried out. A dependence of emission spectrum values from different working pressures in different gas mixtures (SiF 4:H 2) has been studied. A silicon film deposition in pulsed glow discharge with grid hollow cathode on dielectric and conductive substrates in the process of SiF4 decomposition was carried out. The analysis of solid film composition was carried out using EDAX -method. It was shown that silicon films deposit on different substrates in pulsed glow discharge with grid hollow cathode in the process of decomposition of SiF 4 under the working pressures up to 500 Pa
AM_Agreement
Sprog:engelsk
Udgivet: 2012
Fag:
Online adgang:http://elibrary.ru/item.asp?id=20710403
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646248

MARC

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330 |a An experimental study of SiF 4 decomposition process in pulsed glow discharge with grid hollow cathode has been performed. The experiments for SiF 4 decomposition in plasma chemical reactor (gas volume of 5 l) in a mix with hydrogen and without it at working pressures up to 500 Pa were carried out. A dependence of emission spectrum values from different working pressures in different gas mixtures (SiF 4:H 2) has been studied. A silicon film deposition in pulsed glow discharge with grid hollow cathode on dielectric and conductive substrates in the process of SiF4 decomposition was carried out. The analysis of solid film composition was carried out using EDAX -method. It was shown that silicon films deposit on different substrates in pulsed glow discharge with grid hollow cathode in the process of decomposition of SiF 4 under the working pressures up to 500 Pa 
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461 1 |t Известия вузовй. Физика  |f Национальный исследовательский Томский государственный университет   |o научный журнал  |d 1957- 
463 1 |t Vol. 55, № 12-3  |v P. 123-127  |d 2012 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a тлеющий разряд 
610 1 |a silicon film 
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701 1 |a Shugurov  |b V. V.  |c physicist  |c Researcher of Tomsk Polytechnic University  |f 1981-  |g Vladimir Viktorovich  |9 20304 
701 1 |a Denisov  |b V. V. 
701 1 |a Kalushevich  |b A. A. 
701 1 |a Yakovlev  |b V. V. 
701 1 |a Vorobjev (Vorobyov)  |b M. S.  |c specialist in the field of electronics  |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences  |f 1986-  |g Maksim Sergeevich  |9 89110 
701 1 |a Suslov  |b A. I. 
701 1 |a Koval  |b N. N.  |c specialist in the field of electronics  |c Professor of Tomsk Polytechnic University, Doctor of technical sciences  |f 1948-  |g Nikolay Nikolaevich  |3 (RuTPU)RU\TPU\pers\34748  |9 18098 
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