Observation of sub-GeV electrons mirrored by ultrathin crystalline Si

Observation of sub-GeV electrons mirrored by ultrathin crystalline Si

Bibliographic Details
Parent link:Physics Letters B.— , 1967-
Vol. 751.— 2015.— [P. 453-457]
Main Author: Takabayashi Yu. Yushi
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра теоретической и экспериментальной физики (ТиЭФ)
Other Authors: Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Summary:Title screen
Detailed experimental studies are performed on the mirroring effect for 255-MeV electrons channeled through a 0.74-µm-thick Si crystal at the injector linac of the SAGA-LS facility. For the planar channeling alignment, deflection of the beam by 0.45 mrad is observed with 29% efficiency. The effect is explained by computer simulations as a sequence of trajectories of planar-channeled relativistic electrons in an attractive one-dimensional periodic potential of crystallographic planes. Possible applications as a beam splitter are proposed.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2015
Subjects:
электронный ресурс
труды учёных ТПУ
полуволновая технология
Online Access:http://dx.doi.org/10.1016/j.physletb.2015.10.079
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645855

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