Observation of sub-GeV electrons mirrored by ultrathin crystalline Si; Physics Letters B; Vol. 751
| Parent link: | Physics Letters B.— , 1967- Vol. 751.— 2015.— [P. 453-457] |
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| Autore principale: | |
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| Altri autori: | , |
| Riassunto: | Title screen Detailed experimental studies are performed on the mirroring effect for 255-MeV electrons channeled through a 0.74-µm-thick Si crystal at the injector linac of the SAGA-LS facility. For the planar channeling alignment, deflection of the beam by 0.45 mrad is observed with 29% efficiency. The effect is explained by computer simulations as a sequence of trajectories of planar-channeled relativistic electrons in an attractive one-dimensional periodic potential of crystallographic planes. Possible applications as a beam splitter are proposed. Режим доступа: по договору с организацией-держателем ресурса |
| Lingua: | inglese |
| Pubblicazione: |
2015
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| Soggetti: | |
| Accesso online: | http://dx.doi.org/10.1016/j.physletb.2015.10.079 |
| Natura: | Elettronico Capitolo di libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645855 |