Specific features of the charge neutralization of silicon carbide in sintering by electron beam in the forevacuum range of pressures; Technical Physics Letters; Vol. 41, iss. 8

Specific features of the charge neutralization of silicon carbide in sintering by electron beam in the forevacuum range of pressures; Technical Physics Letters; Vol. 41, iss. 8

Podrobná bibliografie
Parent link:	Technical Physics Letters: Scientific Journal Vol. 41, iss. 8.— 2015.— [P. 747-749]
Korporativní autor:	Национальный исследовательский Томский политехнический университет
Další autoři:	Klimov A. S. Aleksandr Sergeevich, Burdovitsin V. A. Viktor Alekseevich, Zenin A. A. Aleksey Aleksandrovich, Oks E. M. Efim Mikhaylovich, Khasanov O. L. Oleg Leonidovich, Dvilis E. S. Edgar Sergeevich, Khasanov A. O. Aleksey Olegovich
Shrnutí:	Title screen It is shown that a noticeable role in the electron beam charge neutralization in the course of elec tronbeam sintering of compacted silicon carbide samples is played, as the sample temperature increases, by the electrical conductivity of a sample being sintered, as well as by thermionic emission from its surface. Experimental results obtained for compacted silicon carbide are used to determine its energy gap width and the electron work function. Model of the slide valve pneumohydraulic impact unit. Режим доступа: по договору с организацией-держателем ресурса
Jazyk:	angličtina
Vydáno:	2015
Témata:	электронный ресурс труды учёных ТПУ карбид кремния спекание пучки электронов
On-line přístup:	http://dx.doi.org/10.1134/S1063785015080118
Médium:	Elektronický zdroj Kapitola
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645570

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