Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams

Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams

Dettagli Bibliografici
Parent link:	Vacuum Vol. 89.— 2013.— [P. 118–121]
Ente Autore:	Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
Altri autori:	Remnev (Remnyov) G. E. Gennady Efimovich, Uglov V. V. Vladimir Vasilievich, Shimanskii (Shymanski) V. I. Vitali Igorevich, Konarski P., Samtsov M. P., Pavlov S. K. Sergey Konstantinovich, Lapchuk N. M.
Riassunto:	Title screen The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method. Режим доступа: по договору с организацией-держателем ресурса
Lingua:	inglese
Pubblicazione:	2013
Soggetti:	электронный ресурс труды учёных ТПУ high intensity ion implantation nanodiamonds carbon implantation silicon raman spectroscopy amorphization SIMS depth profile analysis
Accesso online:	http://dx.doi.org/10.1016/j.vacuum.2012.02.037
Natura:	Elettronico Capitolo di libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645361

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