Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams; Vacuum; Vol. 89

Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams; Vacuum; Vol. 89

מידע ביבליוגרפי
Parent link:Vacuum
Vol. 89.— 2013.— [P. 118–121]
מחבר תאגידי: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
מחברים אחרים: Remnev (Remnyov) G. E. Gennady Efimovich, Uglov V. V. Vladimir Vasilievich, Shimanskii (Shymanski) V. I. Vitali Igorevich, Konarski P., Samtsov M. P., Pavlov S. K. Sergey Konstantinovich, Lapchuk N. M.
סיכום:Title screen
The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.
Режим доступа: по договору с организацией-держателем ресурса
שפה:אנגלית
יצא לאור: 2013
נושאים:
электронный ресурс
труды учёных ТПУ
high intensity ion implantation
nanodiamonds
carbon implantation
silicon
raman spectroscopy
amorphization
SIMS depth profile analysis
גישה מקוונת:http://dx.doi.org/10.1016/j.vacuum.2012.02.037
פורמט: אלקטרוני Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645361

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