Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams; Vacuum; Vol. 89
| Parent link: | Vacuum Vol. 89.— 2013.— [P. 118–121] |
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| Ente Autore: | |
| Altri autori: | , , , , , , |
| Riassunto: | Title screen The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method. Режим доступа: по договору с организацией-держателем ресурса |
| Lingua: | inglese |
| Pubblicazione: |
2013
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| Soggetti: | |
| Accesso online: | http://dx.doi.org/10.1016/j.vacuum.2012.02.037 |
| Natura: | Elettronico Capitolo di libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645361 |
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| 200 | 1 | |a Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams |f G. E. Remnev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 121 (21 tit.)] | ||
| 330 | |a The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Vacuum | ||
| 463 | |t Vol. 89 |v [P. 118–121] |d 2013 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a high intensity ion implantation | |
| 610 | 1 | |a nanodiamonds | |
| 610 | 1 | |a carbon implantation | |
| 610 | 1 | |a silicon | |
| 610 | 1 | |a raman spectroscopy | |
| 610 | 1 | |a amorphization | |
| 610 | 1 | |a SIMS depth profile analysis | |
| 701 | 1 | |a Remnev (Remnyov) |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 |9 15661 | |
| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 | |
| 701 | 1 | |a Shimanskii (Shymanski) |b V. I. |c Physicist |c Associate Scientist of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1986- |g Vitali Igorevich |3 (RuTPU)RU\TPU\pers\36738 | |
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| 701 | 1 | |a Samtsov |b M. P. | |
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