A high-current ion accelerator for short-pulse ion implantation
| Parent link: | Instruments and Experimental Techniques.— , 1956- Vol. 40, iss. 5.— 1997.— [P. 727-731] |
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| Beste egile batzuk: | Remnev (Remnyov) G. E. Gennady Efimovich, Opekunov M. S., Vasil'ev V. V., Lukonin E. I. Evgeny Ivanovich, Matvienko V. M., Furman E. G. Edwin Gugovich |
| Gaia: | Title screen A high-current pulsed accelerator, producing ion beams with a current density of 4-20 A/cm2, an energy of 30-150 kV/n (n is the ion charge), a beam cross-section area of 180 cm2, and a pulse repetition frequency of up to 10 Hz, is described. The accelerator comprises a high-voltage (300 kV) pulse transformer, a nanosecond generator using low-ohmic cables capable of producing two voltage pulses of arbitrary polarity, and a magnetically insulated diode. The first nanosecond voltage pulse forms an explosion-emission plasma at the anode surface, and the following nanosecond pulse accelerates the ions. Performance of the accelerator is illustrated by data on the production of hydrogen, carbon, and aluminum ion beams. Режим доступа: по договору с организацией-держателем ресурса |
| Hizkuntza: | ingelesa |
| Argitaratua: |
1997
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| Gaiak: | |
| Sarrera elektronikoa: | http://www.scopus.com/record/display.uri?eid=2-s2.0-0039540033&origin=inward&txGid=0 |
| Formatua: | Baliabide elektronikoa Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645193 |
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Antzeko izenburuak
-
Influence of the High-Intensity Short-Pulse Implantation of Ions on the Properties of Polycrystalline Silicon; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 8, iss. 6
Argitaratua: (2014) -
A high-current pulsed accelerator with a matching transformer; Instruments and Experimental Techniques; Vol. 47, iss. 3
Argitaratua: (2004) -
A high-current impulse implanter; Instruments and Experimental Techniques; Vol. 58, iss. 5/1
nork: Stepanov A. V. Andrey Vladimirovich
Argitaratua: (2015) -
Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, iss. 6
nork: Kabyshev A. V. Alexander Vasilievich
Argitaratua: (2013) -
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nork: Remnev G. E. Gennady Efimovich
Argitaratua: (2019)