A high-current impulse implanter

A high-current impulse implanter

Bibliographic Details
Parent link:Instruments and Experimental Techniques.— , 1956-
Vol. 58, iss. 5/1.— 2015.— [P. 708-710]
Main Author: Stepanov A. V. Andrey Vladimirovich
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
Other Authors: Shamanin V. I., Remnev G. E. Gennady Efimovich
Summary:Title screen
A high-current impulse implanter on the basis of a high-current ion diode with a radial magnetic field and preliminary plasma production is described. Plasma is formed at the diode anode using a negative voltage pulse that precedes an accelerating-voltage pulse. The pause between pulses is 500 ± 50 ns. Graphite is used as the emission coating on the anode. An ion beam with a current density in the diode focal plane of up to 80 A/cm2 was obtained. Analysis of the elemental composition of the ion beam using the time-of-flight technique showed that the ion beam consists mainly of С+and С+2 carbon ions and Н+ protons.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2015
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://dx.doi.org/10.1134/S0020441215040247
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645173

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