Synthesis of nanosized silicon carbide in a free expiring plasma jet

Synthesis of nanosized silicon carbide in a free expiring plasma jet

Detalles Bibliográficos
Parent link:	Control and Communications (SIBCON): International Siberian Conference on Russia, Omsk, May 21-23, 2015. [4 p.].— , 2015
Autor Corporativo:	Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП)
Outros autores:	Nikitin D. S. Dmitry Sergeevich, Sivkov A. A. Aleksandr Anatolyevich, Pak A. Ya. Aleksandr Yakovlevich, Shanenkova Yu. L. Yuliya Leonidovna, Ivashutenko A. S. Alexander Sergeevich
Summary:	Title screen Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier. Режим доступа: по договору с организацией-держателем ресурса
Publicado:	2015
Subjects:	электронный ресурс труды учёных ТПУ коаксиальные магнитоплазменные ускорители карбид кремния рентгеновские дифрактометры электронная микроскопия
Acceso en liña:	http://dx.doi.org/10.1109/SIBCON.2015.7147160
Formato:	Electrónico Capítulo de libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645168

Internet

http://dx.doi.org/10.1109/SIBCON.2015.7147160