Formation of heavily doped semiconductor layers by pulsed ion beam treatmen; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 122, iss. 1
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal.— , 1984- Vol. 122, iss. 1.— 1997.— [P. 35-38] |
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| Otros Autores: | , , , |
| Sumario: | Title screen The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019cm−3) layers are formed in the subsurface region (0.1-0.5 μm). Режим доступа: по договору с организацией-держателем ресурса |
| Lenguaje: | inglés |
| Publicado: |
1997
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| Materias: | |
| Acceso en línea: | http://dx.doi.org/10.1016/S0168-583X(96)00637-4 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645131 |
| Sumario: | Title screen The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019cm−3) layers are formed in the subsurface region (0.1-0.5 μm). Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/S0168-583X(96)00637-4 |