Bayazitov R. M., Zakirzyanova L. Kh., Khaibullin I. B., & Remnev G. E. Gennady Efimovich. (1997). Formation of heavily doped semiconductor layers by pulsed ion beam treatmen; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 122, iss. 1. 1997. https://doi.org/10.1016/S0168-583X(96)00637-4
Чикаго стиль цитування (17-те видання)Bayazitov R. M., Zakirzyanova L. Kh., Khaibullin I. B., та Remnev G. E. Gennady Efimovich. Formation of Heavily Doped Semiconductor Layers by Pulsed Ion Beam Treatmen; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 122, Iss. 1. 1997, 1997. https://doi.org/10.1016/S0168-583X(96)00637-4.
Стиль цитування MLA (9-ме видання)Bayazitov R. M., et al. Formation of Heavily Doped Semiconductor Layers by Pulsed Ion Beam Treatmen; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 122, Iss. 1. 1997, 1997. https://doi.org/10.1016/S0168-583X(96)00637-4.