APA (7th ed.) Citation

Bayazitov R. M., Zakirzyanova L. Kh., Khaibullin I. B., & Remnev G. E. Gennady Efimovich. (1997). Formation of heavily doped semiconductor layers by pulsed ion beam treatmen. 1997. https://doi.org/10.1016/S0168-583X(96)00637-4

Chicago Style (17th ed.) Citation

Bayazitov R. M., Zakirzyanova L. Kh., Khaibullin I. B., and Remnev G. E. Gennady Efimovich. Formation of Heavily Doped Semiconductor Layers by Pulsed Ion Beam Treatmen. 1997, 1997. https://doi.org/10.1016/S0168-583X(96)00637-4.

MLA (9th ed.) Citation

Bayazitov R. M., et al. Formation of Heavily Doped Semiconductor Layers by Pulsed Ion Beam Treatmen. 1997, 1997. https://doi.org/10.1016/S0168-583X(96)00637-4.