APA (7th ed.) Citation

Bayazitov R. M., Zakirzyanova L. Kh., Khaibullin I. B., & Remnev G. E. Gennady Efimovich. (1997). Formation of heavily doped semiconductor layers by pulsed ion beam treatmen; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 122, iss. 1. 1997. https://doi.org/10.1016/S0168-583X(96)00637-4

Chicago Style (17th ed.) Citation

Bayazitov R. M., Zakirzyanova L. Kh., Khaibullin I. B., and Remnev G. E. Gennady Efimovich. Formation of Heavily Doped Semiconductor Layers by Pulsed Ion Beam Treatmen; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 122, Iss. 1. 1997, 1997. https://doi.org/10.1016/S0168-583X(96)00637-4.

MLA (9th ed.) Citation

Bayazitov R. M., et al. Formation of Heavily Doped Semiconductor Layers by Pulsed Ion Beam Treatmen; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 122, Iss. 1. 1997, 1997. https://doi.org/10.1016/S0168-583X(96)00637-4.