Measurements of parametric X-rays from relativistic electrons in silicon crystals

Measurements of parametric X-rays from relativistic electrons in silicon crystals

Bibliographic Details
Parent link:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal.— , 1984-
Vol. 21, iss. 1-4.— 1987.— [P. 49-55]
Other Authors: Adishchev Yu. N. Yuri Nikolaevich, Didenko A. N. Andrei Nikolaevich, Mun V. V., Pleshkov G. A., Potylitsyn A. P. Alexander Petrovich, Tomchakov V. K., Uglov S. R. Sergey Romanovich, Vorobiev S. A. Sergey Aleksandrovich
Summary:Title screen
Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.
Режим доступа: по договору с организацией-держателем ресурса
Published: 1987
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://dx.doi.org/10.1016/0168-583X(87)90138-8
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644893

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