Measurements of parametric X-rays from relativistic electrons in silicon crystals; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 21, iss. 1-4

Measurements of parametric X-rays from relativistic electrons in silicon crystals

Détails bibliographiques
Parent link:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal.— , 1984- Vol. 21, iss. 1-4.— 1987.— [P. 49-55]
Autres auteurs:	Adishchev Yu. N. Yuri Nikolaevich, Didenko A. N. Andrei Nikolaevich, Mun V. V., Pleshkov G. A., Potylitsyn A. P. Alexander Petrovich, Tomchakov V. K., Uglov S. R. Sergey Romanovich, Vorobiev S. A. Sergey Aleksandrovich
Résumé:	Title screen Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained. Режим доступа: по договору с организацией-держателем ресурса
Langue:	anglais
Publié:	1987
Sujets:	электронный ресурс труды учёных ТПУ
Accès en ligne:	http://dx.doi.org/10.1016/0168-583X(87)90138-8
Format:	Électronique Chapitre de livre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644893

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