Measurements of parametric X-rays from relativistic electrons in silicon crystals; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 21, iss. 1-4

Measurements of parametric X-rays from relativistic electrons in silicon crystals; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 21, iss. 1-4

書目詳細資料
Parent link:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal.— , 1984- Vol. 21, iss. 1-4.— 1987.— [P. 49-55]
其他作者:	Adishchev Yu. N. Yuri Nikolaevich, Didenko A. N. Andrei Nikolaevich, Mun V. V., Pleshkov G. A., Potylitsyn A. P. Alexander Petrovich, Tomchakov V. K., Uglov S. R. Sergey Romanovich, Vorobiev S. A. Sergey Aleksandrovich
總結:	Title screen Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained. Режим доступа: по договору с организацией-держателем ресурса
語言:	英语
出版:	1987
主題:	электронный ресурс труды учёных ТПУ
在線閱讀:	http://dx.doi.org/10.1016/0168-583X(87)90138-8
格式:	電子 Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644893

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