Measurements of parametric X-rays from relativistic electrons in silicon crystals; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 21, iss. 1-4

Podrobná bibliografie
Parent link:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal.— , 1984-
Vol. 21, iss. 1-4.— 1987.— [P. 49-55]
Další autoři: Adishchev Yu. N. Yuri Nikolaevich, Didenko A. N. Andrei Nikolaevich, Mun V. V., Pleshkov G. A., Potylitsyn A. P. Alexander Petrovich, Tomchakov V. K., Uglov S. R. Sergey Romanovich, Vorobiev S. A. Sergey Aleksandrovich
Shrnutí:Title screen
Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.
Режим доступа: по договору с организацией-держателем ресурса
Jazyk:angličtina
Vydáno: 1987
Témata:
On-line přístup:http://dx.doi.org/10.1016/0168-583X(87)90138-8
Médium: Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644893