Measurements of parametric X-rays from relativistic electrons in silicon crystals; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 21, iss. 1-4

Detalles Bibliográficos
Parent link:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal.— , 1984- Vol. 21, iss. 1-4.— 1987.— [P. 49-55]
Otros Autores:	Adishchev Yu. N. Yuri Nikolaevich, Didenko A. N. Andrei Nikolaevich, Mun V. V., Pleshkov G. A., Potylitsyn A. P. Alexander Petrovich, Tomchakov V. K., Uglov S. R. Sergey Romanovich, Vorobiev S. A. Sergey Aleksandrovich
Sumario:	Title screen Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained. Режим доступа: по договору с организацией-держателем ресурса
Lenguaje:	inglés
Publicado:	1987
Materias:	электронный ресурс труды учёных ТПУ
Acceso en línea:	http://dx.doi.org/10.1016/0168-583X(87)90138-8
Formato:	Electrónico Capítulo de libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644893

Descripción
Sumario:	Title screen Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained. Режим доступа: по договору с организацией-держателем ресурса
DOI:	10.1016/0168-583X(87)90138-8

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