Measurements of parametric X-rays from relativistic electrons in silicon crystals

التفاصيل البيبلوغرافية
Parent link:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal.— , 1984- Vol. 21, iss. 1-4.— 1987.— [P. 49-55]
مؤلفون آخرون:	Adishchev Yu. N. Yuri Nikolaevich, Didenko A. N. Andrei Nikolaevich, Mun V. V., Pleshkov G. A., Potylitsyn A. P. Alexander Petrovich, Tomchakov V. K., Uglov S. R. Sergey Romanovich, Vorobiev S. A. Sergey Aleksandrovich
الملخص:	Title screen Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained. Режим доступа: по договору с организацией-держателем ресурса
اللغة:	الإنجليزية
منشور في:	1987
الموضوعات:	электронный ресурс труды учёных ТПУ
الوصول للمادة أونلاين:	http://dx.doi.org/10.1016/0168-583X(87)90138-8
التنسيق:	الكتروني فصل الكتاب
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644893

الوصف
الملخص:	Title screen Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained. Режим доступа: по договору с организацией-держателем ресурса
DOI:	10.1016/0168-583X(87)90138-8

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