Evolution of Stress Concentration along CurvilinearModified Surface Layer-Base Material Interface. Numerical Simulation

Chi tiết về thư mục
Parent link:AIP Conference Proceedings
Vol. 1683 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures.— 2015.— [020018, 4 p.]
Tác giả của công ty: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра физики высоких технологий в машиностроении (ФВТМ)
Tác giả khác: Balokhonov R. R. Ruslan Revovich, Martynov S. A. Sergei, Romanova V. A. Varvara Aleksandrovna, Batukhtina E. E. Ekaterina
Tóm tắt:Title screen
The interfacial mechanisms of the stress concentration in materials with modified surface layers are investigated. A dynamic boundary-value problem in a plane-strain formulation is solved numerically by the finitedifference method. Serrated and wavy base material-surface layer interfaces observed experimentally are assigned explicitly in calculations. Two stages in the evolution of the stress concentration are found to occur due to irregular interfacial geometry. The stress concentration in near-interfacial regions turns out to depend on the sinusoidal wavy interface thickness and roughness.
Режим доступа: по договору с организацией-держателем ресурса
Ngôn ngữ:Tiếng Anh
Được phát hành: 2015
Những chủ đề:
Truy cập trực tuyến:http://dx.doi.org/10.1063/1.4932708
Định dạng: Điện tử Chương của sách
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644859
Miêu tả
Tóm tắt:Title screen
The interfacial mechanisms of the stress concentration in materials with modified surface layers are investigated. A dynamic boundary-value problem in a plane-strain formulation is solved numerically by the finitedifference method. Serrated and wavy base material-surface layer interfaces observed experimentally are assigned explicitly in calculations. Two stages in the evolution of the stress concentration are found to occur due to irregular interfacial geometry. The stress concentration in near-interfacial regions turns out to depend on the sinusoidal wavy interface thickness and roughness.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1063/1.4932708