Generating femtosecond pulses in the mid-IR and THz ranges in GaSe1 − x Te xcrystals

Generating femtosecond pulses in the mid-IR and THz ranges in GaSe1 − x Te xcrystals

Bibliographic Details
Parent link:Bulletin of the Russian Academy of Sciences: Physics: Scientific Journal.— , 2007-
Vol. 79, iss. 2.— 2015.— [P. 238-241]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра сильноточной электроники (СЭ)
Other Authors: Lubenko D. M. Dmitry Mikhaylovich, Losev V. F. Valery Fedorovich, Andreev Yu. M. Yury Mikhaylovich, Lansky G. V. Grigory Vladimirovich, Svetlichniy V. A. Valery Anatoljevich
Summary:Title screen
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8-24 μm and 0.2-3 THz ranges by ≥50%.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2015
Series:Proceedings Of The International Conference "Luminescence And Laser Physics, 2014"
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://dx.doi.org/10.3103/S1062873815020161
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644835

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