The Effect of Doping on the Electrophysical Properties of Polycrystalline Diamond Films Deposited from an Abnormal Glow Discharge

The Effect of Doping on the Electrophysical Properties of Polycrystalline Diamond Films Deposited from an Abnormal Glow Discharge

Bibliographic Details
Parent link:Journal of Physics: Conference Series
Vol. 652 : Gas Discharge Plasmas and Their Applications (GDP 2015).— 2015.— [012030, 6 p.]
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
Other Authors: Kabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, Linnik S. A. Stepan Andreevich, Remnev G. E. Gennady Efimovich
Summary:Title screen
The paper is focused on the study of the boron doping effect on the electrical characteristics, on the mechanism of charge carrier transfer, and on the energy spectrum of the localized defect states in the polycrystalline diamond films (PDF) deposited from an abnormal glow discharge. PDF doping enables to form the semiconductor layers of p-type conductivity, which have as good properties as those of PDF produced by the alternative methods. The doping reduces the degree of disorder in the film material brought by the growth defects, which determine the film electrical characteristics and electrotransfer mechanism. The PDF electrical characteristics and electrotransfer mechanism are determined by the defects of different nature, whose band gap energy levels have a continuous energy distribution. A p-type activation component is realized in the exchange of charge carriers between the valence band and shallow acceptor levels with the activation energy of 0.013-0.022 eV. Doping increases the effect of the hopping mechanism of the conductivity involving the localized states with a density of (1-6)∙10{20} eV{-1}∙cm{-3} distributed near the Fermi level, which is in the low half of the band gap.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2015
Subjects:
труды учёных ТПУ
электронный ресурс
легирование
электрофизические свойства
поликристаллические пленки
алмазные пленки
тлеющие разряды
Online Access:http://dx.doi.org/10.1088/1742-6596/652/1/012030
http://earchive.tpu.ru/handle/11683/18217
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644602

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