The plasma dynamic synthesis of aluminum nitride in system with gaseous and solid precursors; IOP Conference Series: Materials Science and Engineering; Vol. 93: Modern Technique and Technologies (MTT'2015)
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 93: Modern Technique and Technologies (MTT'2015).— 2015.— [012051, 6 p.] |
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| Collectivité auteur: | |
| Autres auteurs: | , , , |
| Résumé: | Title screen Aluminum nitride is widely-used material for semiconductor devices and ceramics production. Despite the large number of known ways to obtain AlN powder, the problem of synthesizing high-purity and nanosized product is still urgent. This paper shows results on plasma dynamic synthesis of aluminum nitride using system based coaxial magneto plasma accelerator. The influence of using gaseous or solid precursors on such characteristics of the final product as phase content and particle size distribution was investigated. According to X-Ray diffractometry AlN phase content is increased in the case of use of solid nitrogen-containing precursor (melamine) in comparison with the use of gaseous nitrogen. The particle sizes distribution histograms are built in accordance with the data of bright-field TEM-images and shown in this paper. The most of particles are less than 100 nm in both experiment but there are some differences, depended on the precursor type, that are also described. Режим доступа: по договору с организацией-держателем ресурса |
| Langue: | anglais |
| Publié: |
2015
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| Collection: | Materials and technologies new generations |
| Sujets: | |
| Accès en ligne: | http://dx.doi.org/10.1088/1757-899X/93/1/012051 http://earchive.tpu.ru/handle/11683/20069 |
| Format: | Électronique Chapitre de livre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644551 |
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| 200 | 1 | |a The plasma dynamic synthesis of aluminum nitride in system with gaseous and solid precursors |f I. I. Shanenkov [et al.] | |
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| 225 | 1 | |a Materials and technologies new generations | |
| 300 | |a Title screen | ||
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| 330 | |a Aluminum nitride is widely-used material for semiconductor devices and ceramics production. Despite the large number of known ways to obtain AlN powder, the problem of synthesizing high-purity and nanosized product is still urgent. This paper shows results on plasma dynamic synthesis of aluminum nitride using system based coaxial magneto plasma accelerator. The influence of using gaseous or solid precursors on such characteristics of the final product as phase content and particle size distribution was investigated. According to X-Ray diffractometry AlN phase content is increased in the case of use of solid nitrogen-containing precursor (melamine) in comparison with the use of gaseous nitrogen. The particle sizes distribution histograms are built in accordance with the data of bright-field TEM-images and shown in this paper. The most of particles are less than 100 nm in both experiment but there are some differences, depended on the precursor type, that are also described. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\9450 |t Vol. 93: Modern Technique and Technologies (MTT'2015) |o 21th International Conference for Students and Young Scientists, 5-9 October 2015, Tomsk |o [proceedings] |v [012051, 6 p.] |d 2015 | |
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| 610 | 1 | |a динамический синтез | |
| 610 | 1 | |a нитрид алюминия | |
| 610 | 1 | |a полупроводниковые приборы | |
| 610 | 1 | |a керамика | |
| 610 | 1 | |a рентгеновская дифрактометрия | |
| 701 | 1 | |a Shanenkov |b I. I. |c specialist in the field of electric power engineering |c Associate Professor of the Department of Tomsk Polytechnic University, Candidate of Sciences |f 1990- |g Ivan Igorevich |3 (RuTPU)RU\TPU\pers\32880 |9 16728 | |
| 701 | 1 | |a Sivkov |b A. A. |c Specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1951- |g Aleksandr Anatolyevich |3 (RuTPU)RU\TPU\pers\32273 |9 16262 | |
| 701 | 1 | |a Ivashutenko |b A. S. |c specialist in the field of electrical engineering |c Associate Professor of the Tomsk Polytechnic University, Candidate of technical sciences |f 1981- |g Alexander Sergeevich |3 (RuTPU)RU\TPU\pers\33076 |9 16908 | |
| 701 | 1 | |a Shanenkova |b Yu. L. |c specialist in the field of electric power engineering |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1991- |g Yuliya Leonidovna |3 (RuTPU)RU\TPU\pers\34119 |9 17659 | |
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