Deformation characteristics of the near-surface layers of zirconia ceramics implanted with aluminum ions
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 93: Modern Technique and Technologies (MTT'2015).— 2015.— [012026, 5 p.] |
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| Corporate Author: | |
| Other Authors: | , , , |
| Summary: | Title screen The effect of ion treatment on the phase composition and mechanical properties of the near-surface layers of zirconium ceramic composition 97 ZrO[2-3]Y[2]O[3] (mol%) was studied. Irradiation of the samples was carried out by accelerated ions of aluminum with using vacuum-arc source Mevva 5-Ru. Ion beam had the following parameters: the energy of the accelerated ions E=78 keV, the pulse current density J[i] = 4mA/cm{2}, current pulse duration equal tay=250 mcs, pulse repetition frequency f=5 Hz. Exposure doses (fluence) were 10{16} и 10{17} ion/cm{2}. The depth distribution implanted ions was studied by SIMS method. It is shown that the maximum projected range of the implanted ions is equal to 250 nm. Near-surface layers were investigated by X-ray diffraction (XRD) at fixed glancing incidence angle. It is shown that implantation of aluminum ions into the ceramics does not lead to a change in the phase composition of the near-surface layer. The influence of implanted ions on mechanical properties of ceramic near-surface layers was studied by the method of dynamic nanoindentation using small loads on the indenter P=300 mN. It is shown that in ion- implanted ceramic layer the processes of material recovery in the deformed region in the unloading mode proceeds with higher efficiency as compared with the initial material state. The deformation characteristics of samples before and after ion treatment have been determined from interpretation of the resulting P-h curves within the loading and unloading sections by the technique proposed by Oliver and Pharr. It was found that implantation of aluminum ions in the near-surface layer of zirconia ceramics increases nanohardness and reduces the Young's modulus. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2015
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| Series: | Materials and technologies new generations |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1088/1757-899X/93/1/012026 http://earchive.tpu.ru/handle/11683/19993 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644532 |
MARC
| LEADER | 00000nla2a2200000 4500 | ||
|---|---|---|---|
| 001 | 644532 | ||
| 005 | 20240215134035.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\9613 | ||
| 035 | |a RU\TPU\network\9611 | ||
| 090 | |a 644532 | ||
| 100 | |a 20151119a2015 k y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 105 | |a a z 101zy | ||
| 135 | |a drgn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Deformation characteristics of the near-surface layers of zirconia ceramics implanted with aluminum ions |f S. A. Gyngazov (Ghyngazov) [et al.] | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Materials and technologies new generations | |
| 300 | |a Title screen | ||
| 320 | |a [References: 11 tit.] | ||
| 330 | |a The effect of ion treatment on the phase composition and mechanical properties of the near-surface layers of zirconium ceramic composition 97 ZrO[2-3]Y[2]O[3] (mol%) was studied. Irradiation of the samples was carried out by accelerated ions of aluminum with using vacuum-arc source Mevva 5-Ru. Ion beam had the following parameters: the energy of the accelerated ions E=78 keV, the pulse current density J[i] = 4mA/cm{2}, current pulse duration equal tay=250 mcs, pulse repetition frequency f=5 Hz. Exposure doses (fluence) were 10{16} и 10{17} ion/cm{2}. The depth distribution implanted ions was studied by SIMS method. It is shown that the maximum projected range of the implanted ions is equal to 250 nm. Near-surface layers were investigated by X-ray diffraction (XRD) at fixed glancing incidence angle. It is shown that implantation of aluminum ions into the ceramics does not lead to a change in the phase composition of the near-surface layer. The influence of implanted ions on mechanical properties of ceramic near-surface layers was studied by the method of dynamic nanoindentation using small loads on the indenter P=300 mN. It is shown that in ion- implanted ceramic layer the processes of material recovery in the deformed region in the unloading mode proceeds with higher efficiency as compared with the initial material state. The deformation characteristics of samples before and after ion treatment have been determined from interpretation of the resulting P-h curves within the loading and unloading sections by the technique proposed by Oliver and Pharr. It was found that implantation of aluminum ions in the near-surface layer of zirconia ceramics increases nanohardness and reduces the Young's modulus. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\9450 |t Vol. 93: Modern Technique and Technologies (MTT'2015) |o 21th International Conference for Students and Young Scientists, 5-9 October 2015, Tomsk |o [proceedings] |v [012026, 5 p.] |d 2015 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a деформационные характеристики | |
| 610 | 1 | |a приповерхностные слои | |
| 610 | 1 | |a циркониевая керамика | |
| 610 | 1 | |a ионы алюминия | |
| 610 | 1 | |a керамические композиции | |
| 610 | 1 | |a имплантация ионов | |
| 701 | 1 | |a Gyngazov (Ghyngazov) |b S. A. |c specialist in the field of electronics |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1958- |g Sergey Anatolievich |3 (RuTPU)RU\TPU\pers\33279 |9 17024 | |
| 701 | 1 | |a Vasiljev |b I. P. |c a specialist in the field of electrical engineering |c assistant researcher of Tomsk Polytechnic University |f 1990- |g Ivan Petrovich |3 (RuTPU)RU\TPU\pers\33976 |9 17549 | |
| 701 | 1 | |a Frangulyan (Franguljyan) |b Т. S. |c specialist in the field of electronics, dielectrics and semiconductors |c leading researcher of Tomsk Polytechnic University, candidate of physical and mathematical Sciences |f 1940- |g Tamara Semenovna |3 (RuTPU)RU\TPU\pers\33975 | |
| 701 | 1 | |a Chernyavski (Chernyavskiy) |b A. V. |c specialist in the field of electronics |c senior researcher of Tomsk Polytechnic University, candidate of physico-mathematical sciences |f 1966- |g Aleksandr Viktorovich |3 (RuTPU)RU\TPU\pers\34159 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт неразрушающего контроля (ИНК) |b Проблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников (ПНИЛ ЭДиП) |3 (RuTPU)RU\TPU\col\19033 |
| 801 | 2 | |a RU |b 63413507 |c 20161122 |g RCR | |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1088/1757-899X/93/1/012026 |
| 856 | 4 | 0 | |u http://earchive.tpu.ru/handle/11683/19993 |
| 942 | |c CF | ||