Effects of P-N Junction Built-In Electric Field on Ir-Led Resistance under Gamma Rays Irradiation; Applied Mechanics and Materials; Vol. 770 : Urgent Problems of Up-to-Date Mechanical Engineering

Effects of P-N Junction Built-In Electric Field on Ir-Led Resistance under Gamma Rays Irradiation; Applied Mechanics and Materials; Vol. 770 : Urgent Problems of Up-to-Date Mechanical Engineering

Detalles Bibliográficos
Parent link:	Applied Mechanics and Materials: Scientific Journal Vol. 770 : Urgent Problems of Up-to-Date Mechanical Engineering.— 2015.— [P. 522-525]
Autor Principal:	Gradoboev A. V. Aleksandr Vasilyevich
Autor Corporativo:	Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра естественного научного образования (ЕНО)
Outros autores:	Sednev V. V. Vyacheslav Vladimirovich
Summary:	Title screen It is known that the rate of introduction of radiation defects into the Schottky barrier of GaAs and InP diodes depends on the presence of the electric field. The main aim of this research is to study the influence of the built-in electric field at the p-n junction on the resistance of dual AlGaAs heterostructure IR-LEDs under gamma rays irradiation. It is determined that the rate of defects introduction in the presence of built-in electric field or reverse bias at p-n junction is considerably less than the rate of defects introduction into the neutral region without electric field. Then the possible ways of improving the radiation resistance of infrared LEDs are considered. Режим доступа: по договору с организацией-держателем ресурса
Idioma:	inglés
Publicado:	2015
Series:	Mechatronics, Automation and Control
Subjects:	электронный ресурс труды учёных ТПУ гетероструктуры светодиоды электрические поля облучение гамма-лучи
Acceso en liña:	http://dx.doi.org/10.4028/www.scientific.net/AMM.770.522
Formato:	Electrónico Capítulo de libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643421

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