Effects of P-N Junction Built-In Electric Field on Ir-Led Resistance under Gamma Rays Irradiation; Applied Mechanics and Materials; Vol. 770 : Urgent Problems of Up-to-Date Mechanical Engineering
| Parent link: | Applied Mechanics and Materials: Scientific Journal Vol. 770 : Urgent Problems of Up-to-Date Mechanical Engineering.— 2015.— [P. 522-525] |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Otros Autores: | |
| Sumario: | Title screen It is known that the rate of introduction of radiation defects into the Schottky barrier of GaAs and InP diodes depends on the presence of the electric field. The main aim of this research is to study the influence of the built-in electric field at the p-n junction on the resistance of dual AlGaAs heterostructure IR-LEDs under gamma rays irradiation. It is determined that the rate of defects introduction in the presence of built-in electric field or reverse bias at p-n junction is considerably less than the rate of defects introduction into the neutral region without electric field. Then the possible ways of improving the radiation resistance of infrared LEDs are considered. Режим доступа: по договору с организацией-держателем ресурса |
| Lenguaje: | inglés |
| Publicado: |
2015
|
| Colección: | Mechatronics, Automation and Control |
| Materias: | |
| Acceso en línea: | http://dx.doi.org/10.4028/www.scientific.net/AMM.770.522 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643421 |
MARC
| LEADER | 00000nla2a2200000 4500 | ||
|---|---|---|---|
| 001 | 643421 | ||
| 005 | 20231102025251.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\8413 | ||
| 035 | |a RU\TPU\network\8411 | ||
| 090 | |a 643421 | ||
| 100 | |a 20150909a2015 k y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 105 | |a a z 101zy | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Effects of P-N Junction Built-In Electric Field on Ir-Led Resistance under Gamma Rays Irradiation |f A. V. Gradoboev, V. V. Sednev | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Mechatronics, Automation and Control | |
| 300 | |a Title screen | ||
| 330 | |a It is known that the rate of introduction of radiation defects into the Schottky barrier of GaAs and InP diodes depends on the presence of the electric field. The main aim of this research is to study the influence of the built-in electric field at the p-n junction on the resistance of dual AlGaAs heterostructure IR-LEDs under gamma rays irradiation. It is determined that the rate of defects introduction in the presence of built-in electric field or reverse bias at p-n junction is considerably less than the rate of defects introduction into the neutral region without electric field. Then the possible ways of improving the radiation resistance of infrared LEDs are considered. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\5920 |t Applied Mechanics and Materials |o Scientific Journal | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\8263 |t Vol. 770 : Urgent Problems of Up-to-Date Mechanical Engineering |o International conference, December 11-12, 2014, Yurga, Russia |o [proceedings] |f National Research Tomsk Polytechnic University (TPU) ; ed. D. A. Chinakhov |v [P. 522-525] |d 2015 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a гетероструктуры | |
| 610 | 1 | |a светодиоды | |
| 610 | 1 | |a электрические поля | |
| 610 | 1 | |a облучение | |
| 610 | 1 | |a гамма-лучи | |
| 700 | 1 | |a Gradoboev |b A. V. |c physicist |c Professor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences |f 1952- |g Aleksandr Vasilyevich |2 stltpush |3 (RuTPU)RU\TPU\pers\34242 |9 17773 | |
| 701 | 1 | |a Sednev |b V. V. |c specialist in the field of mechanical engineering |c senior lecturer of Yurga technological Institute of Tomsk Polytechnic University |f 1981- |g Vyacheslav Vladimirovich |2 stltpush |3 (RuTPU)RU\TPU\pers\35101 |9 18376 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Юргинский технологический институт (филиал) (ЮТИ) |b Кафедра естественного научного образования (ЕНО) |h 7134 |2 stltpush |3 (RuTPU)RU\TPU\col\18894 |
| 801 | 2 | |a RU |b 63413507 |c 20150909 |g RCR | |
| 856 | 4 | 0 | |u http://dx.doi.org/10.4028/www.scientific.net/AMM.770.522 |
| 942 | |c CF | ||