Development of an Advanced Control System for a ChemicalVapor Deposition (CVD) Reactor for Polysilicon Production

Development of an Advanced Control System for a ChemicalVapor Deposition (CVD) Reactor for Polysilicon Production

Bibliographic Details
Parent link:Chemical Engineering Transactions
Vol. 43.— 2015.— [P. 1531-1536]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра электроники и автоматики физических установок (№ 24) (ЭАФУ)
Other Authors: Kozin K. A. Kirill Andreevich, Goryunov A. G. Aleksey Germanovich, Manenti F. Flavio, Rossi F. Francesco, Stolpovsky A. E. Aleksey Evgenjevich
Summary:Title screen
Traditionally high-grade polycrystalline silicon production is obtained by the Chemical Vapor Deposition (CVD)process in the so-called Siemens reactor. The problem of rod temperature control in such a reactor isbroached in this work. An indirect estimation method of the polysilicon rod diameter and the temperatureestimation by means of the rod electrical resistance are both proposed. The main issue to overcome is relatedto the intrinsically unsteady-state conditions of the Siemens reactor (and all the batch reactors as well). Fromthis perspective, the problem of temperature measurement can be solved using the appropriate pyrometer,although the temperature at the center of the rod has still to be estimate numerically. The aim of this paper isto develop a novel adaptive control system for the Siemens reactor based on neuro-fuzzy approach for boththe parameter tuning and the control loop itself. A comparative discussion between the proposed method andother advanced control techniques is proposed.
Published: 2015
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://dx.doi.org/10.3303/CET1543256
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643305

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