Development of an Advanced Control System for a ChemicalVapor Deposition (CVD) Reactor for Polysilicon Production

Dettagli Bibliografici
Parent link:Chemical Engineering Transactions
Vol. 43.— 2015.— [P. 1531-1536]
Ente Autore: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра электроники и автоматики физических установок (№ 24) (ЭАФУ)
Altri autori: Kozin K. A. Kirill Andreevich, Goryunov A. G. Aleksey Germanovich, Manenti F. Flavio, Rossi F. Francesco, Stolpovsky A. E. Aleksey Evgenjevich
Riassunto:Title screen
Traditionally high-grade polycrystalline silicon production is obtained by the Chemical Vapor Deposition (CVD)process in the so-called Siemens reactor. The problem of rod temperature control in such a reactor isbroached in this work. An indirect estimation method of the polysilicon rod diameter and the temperatureestimation by means of the rod electrical resistance are both proposed. The main issue to overcome is relatedto the intrinsically unsteady-state conditions of the Siemens reactor (and all the batch reactors as well). Fromthis perspective, the problem of temperature measurement can be solved using the appropriate pyrometer,although the temperature at the center of the rod has still to be estimate numerically. The aim of this paper isto develop a novel adaptive control system for the Siemens reactor based on neuro-fuzzy approach for boththe parameter tuning and the control loop itself. A comparative discussion between the proposed method andother advanced control techniques is proposed.
Pubblicazione: 2015
Soggetti:
Accesso online:http://dx.doi.org/10.3303/CET1543256
Natura: Elettronico Capitolo di libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643305

MARC

LEADER 00000nla0a2200000 4500
001 643305
005 20250219163802.0
035 |a (RuTPU)RU\TPU\network\8297 
090 |a 643305 
100 |a 20150907d2015 k||y0rusy50 ba 
101 0 |a eng 
135 |a drcn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Development of an Advanced Control System for a ChemicalVapor Deposition (CVD) Reactor for Polysilicon Production  |f K. A. Kozin [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: p. 1536 (6 tit.)] 
330 |a Traditionally high-grade polycrystalline silicon production is obtained by the Chemical Vapor Deposition (CVD)process in the so-called Siemens reactor. The problem of rod temperature control in such a reactor isbroached in this work. An indirect estimation method of the polysilicon rod diameter and the temperatureestimation by means of the rod electrical resistance are both proposed. The main issue to overcome is relatedto the intrinsically unsteady-state conditions of the Siemens reactor (and all the batch reactors as well). Fromthis perspective, the problem of temperature measurement can be solved using the appropriate pyrometer,although the temperature at the center of the rod has still to be estimate numerically. The aim of this paper isto develop a novel adaptive control system for the Siemens reactor based on neuro-fuzzy approach for boththe parameter tuning and the control loop itself. A comparative discussion between the proposed method andother advanced control techniques is proposed. 
461 |t Chemical Engineering Transactions 
463 |t Vol. 43  |v [P. 1531-1536]  |d 2015 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
701 1 |a Kozin  |b K. A.  |c specialist in the field of automation and electronics  |c Associate Professor of Tomsk Polytechnic University, Candidate of technical sciences  |f 1980-  |g Kirill Andreevich  |3 (RuTPU)RU\TPU\pers\33732  |9 17363 
701 1 |a Goryunov  |b A. G.  |c Specialist in the field of automatic control  |c head of the Department Tomsk Polytechnic University, doctor of technical Sciences  |f 1979-  |g Aleksey Germanovich  |3 (RuTPU)RU\TPU\pers\32980  |9 16825 
701 1 |a Manenti  |b F.  |c specialist in the field of automation equipment and electronics  |c researcher of Tomsk Polytechnic University  |f 1977-  |g Flavio  |3 (RuTPU)RU\TPU\pers\37334 
701 1 |a Rossi  |b F.  |g Francesco 
701 1 |a Stolpovsky  |b A. E.  |g Aleksey Evgenjevich 
712 0 2 |a Национальный исследовательский Томский политехнический университет (ТПУ)  |b Физико-технический институт (ФТИ)  |b Кафедра электроники и автоматики физических установок (№ 24) (ЭАФУ)  |3 (RuTPU)RU\TPU\col\18731 
801 2 |a RU  |b 63413507  |c 20160926  |g RCR 
856 4 |u http://dx.doi.org/10.3303/CET1543256 
942 |c CF