Influence of an initial chemical state of cation impurities on their diffusion in ionic crystals
| Parent link: | Control and Communications (SIBCON): International Siberian Conference on Russia, Omsk, May 21-23, 2015. [4 p.].— , 2015 |
|---|---|
| Main Author: | |
| Corporate Author: | |
| Other Authors: | , |
| Summary: | Title screen Depth profiles of magnesium, fluorine and oxygen impurities was examined in the surface layers of alkali-halide crystals using method of secondary ion mass spectrometry. Samples of potassium bromide, coated with a surface film of magnesium fluoride were subjected to isothermal diffusion annealing in air at various times. It is shown that the diffusion of O ions occurs from the ambient atmosphere besides the diffusion of Mg and F ions during annealing of KBr crystals. Accurate estimation of the diffusion coefficients of cationic impurity Mg requires taking into account the possible interaction of this impurity and oxygen. The effect of an intensive electron beam on diffusion of magnesium impurity in crystals of fluoride of lithium is studied. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1109/SIBCON.2015.7147277 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643104 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 643104 | ||
| 005 | 20250604150419.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\8092 | ||
| 035 | |a RU\TPU\network\8089 | ||
| 090 | |a 643104 | ||
| 100 | |a 20150831d2015 k||y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a RU | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Influence of an initial chemical state of cation impurities on their diffusion in ionic crystals |f S. A. Gyngazov (Ghyngazov), Т. S. Frangulyan (Franguljyan), A. V. Chernyavski (Chernyavskiy) | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 12 tit.] | ||
| 330 | |a Depth profiles of magnesium, fluorine and oxygen impurities was examined in the surface layers of alkali-halide crystals using method of secondary ion mass spectrometry. Samples of potassium bromide, coated with a surface film of magnesium fluoride were subjected to isothermal diffusion annealing in air at various times. It is shown that the diffusion of O ions occurs from the ambient atmosphere besides the diffusion of Mg and F ions during annealing of KBr crystals. Accurate estimation of the diffusion coefficients of cationic impurity Mg requires taking into account the possible interaction of this impurity and oxygen. The effect of an intensive electron beam on diffusion of magnesium impurity in crystals of fluoride of lithium is studied. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 463 | |t Control and Communications (SIBCON) |o International Siberian Conference on Russia, Omsk, May 21-23, 2015 |v [4 p.] |o [proceedings] |d 2015 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a diffusion | |
| 610 | 1 | |a alkali-halide crystals | |
| 610 | 1 | |a secondary ion mass spectrometry | |
| 700 | 1 | |a Gyngazov (Ghyngazov) |b S. A. |c specialist in the field of electronics |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1958- |g Sergey Anatolievich |3 (RuTPU)RU\TPU\pers\33279 |9 17024 | |
| 701 | 1 | |a Frangulyan (Franguljyan) |b Т. S. |c specialist in the field of electronics, dielectrics and semiconductors |c leading researcher of Tomsk Polytechnic University, candidate of physical and mathematical Sciences |f 1940- |g Tamara Semenovna |3 (RuTPU)RU\TPU\pers\33975 | |
| 701 | 1 | |a Chernyavski (Chernyavskiy) |b A. V. |c specialist in the field of electronics |c senior researcher of Tomsk Polytechnic University, candidate of physico-mathematical sciences |f 1966- |g Aleksandr Viktorovich |3 (RuTPU)RU\TPU\pers\34159 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт неразрушающего контроля (ИНК) |b Проблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников (ПНИЛ ЭДиП) |3 (RuTPU)RU\TPU\col\19033 |
| 801 | 2 | |a RU |b 63413507 |c 20160229 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u http://dx.doi.org/10.1109/SIBCON.2015.7147277 | |
| 942 | |c CF | ||