Transition in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation; IOP Conference Series: Materials Science and Engineering; Vol. 81 : Radiation-Thermal Effects and Processes in Inorganic Materials

Detalles Bibliográficos
Parent link:	IOP Conference Series: Materials Science and Engineering Vol. 81 : Radiation-Thermal Effects and Processes in Inorganic Materials.— 2015.— [012008, 6 p.]
Autor principal:	Gradoboev A. V. Aleksandr Vasilyevich
Autores Corporativos:	Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра естественного научного образования (ЕНО), Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра безопасности жизнедеятельности, экологии и физического воспитания (БЖДЭФВ)
Otros Autores:	Orlova K. N. Kseniya Nikolaevna
Sumario:	Title screen Кафедра безопасности жизнедеятельности, экологии и физического воспитания. Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation Objects of the research are 590 nm and 630 nm LEDs based on AlGaInP heterostructures. It is proved that LEDs′ radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed. Режим доступа: по договору с организацией-держателем ресурса
Lenguaje:	inglés
Publicado:	2015
Materias:	электронный ресурс труды учёных ТПУ переходы гетероструктуры квантовые ямы нейтронные излучения быстрые нейтроны полупроводники
Acceso en línea:	http://dx.doi.org/10.1088/1757-899X/81/1/012008 http://earchive.tpu.ru/handle/11683/14689
Formato:	Electrónico Capítulo de libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=642942