Research on the radiation exposure "memory effects" in AlGaAs heterostructures

Research on the radiation exposure "memory effects" in AlGaAs heterostructures

Bibliographic Details
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 81 : Radiation-Thermal Effects and Processes in Inorganic Materials.— 2015.— [012007, 7 p.]
Main Author: Gradoboev A. V. Aleksandr Vasilyevich
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра естественного научного образования (ЕНО)
Other Authors: Sednev V. V. Vyacheslav Vladimirovich
Summary:Title screen
Radiation exposure and long running time cause degradation of semiconductors' structures as well as semiconductors based on these structures. Besides, long running time can be the reason of partial radiation defects annealing. The purpose of the research work is to study the "memory effect" that happens during fast neuron radiation in AlGaAs heterostructures. Objects of the research are Infrared Light Emitting Electrodes (IRED) based on doubled AlGaAs heterostructures. During the experimental research LEDs were preliminarily radiated with fast neutrons, and radiation defects were annealed within the condition of current training with high temperatures, then emission power was measured. The research proved the existence of the "memory effect" that results in radiation stability enhancement with subsequent radiation. Possible mechanisms of the "memory effect" occurrence are under review.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2015
Subjects:
электронный ресурс
труды учёных ТПУ
радиационные воздействия
гетероструктуры
полупроводники
светодиоды
эффект памяти
Online Access:http://dx.doi.org/10.1088/1757-899X/81/1/012007
http://earchive.tpu.ru/handle/11683/14688
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=642940

Similar Items

Similar Items