Production of Ultradispersed Crystalline Silicon Carbide by Plasmodynamic Synthesis

Detaylı Bibliyografya
Parent link:Journal of Superhard Materials.— , 2013
Vol. 35, iss. 3.— 2013.— [P. 137-142]
Müşterek Yazar: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП)
Diğer Yazarlar: Sivkov A. A. Aleksandr Anatolyevich, Nikitin D. S., Pak A. Ya. Aleksandr Yakovlevich, Rakhmatullin I. A. Ilyas Aminovich
Özet:Title screen
The direct plasmodynamic synthesis of β-SiC ultradispersed cubic silicon carbide under the action of supersonic pulse flow of carbon-silicon electric-discharge plasma onto a copper barrier in the argon atmosphere has been realized. A powdered product with a high β-SiC content has been obtained, whose single crystals have a mean size of about 100 nm and natural crystallographic habit close to the ideal one
Режим доступа: по договору с организацией-держателем ресурса
Dil:İngilizce
Baskı/Yayın Bilgisi: 2013
Konular:
Online Erişim:http://link.springer.com/article/10.3103/S1063457613030027
Materyal Türü: Elektronik Kitap Bölümü
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=642784
Diğer Bilgiler
Özet:Title screen
The direct plasmodynamic synthesis of β-SiC ultradispersed cubic silicon carbide under the action of supersonic pulse flow of carbon-silicon electric-discharge plasma onto a copper barrier in the argon atmosphere has been realized. A powdered product with a high β-SiC content has been obtained, whose single crystals have a mean size of about 100 nm and natural crystallographic habit close to the ideal one
Режим доступа: по договору с организацией-держателем ресурса