Production of Ultradispersed Crystalline Silicon Carbide by Plasmodynamic Synthesis; Journal of Superhard Materials; Vol. 35, iss. 3

Dades bibliogràfiques
Parent link:Journal of Superhard Materials.— , 2013
Vol. 35, iss. 3.— 2013.— [P. 137-142]
Autor corporatiu: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП)
Altres autors: Sivkov A. A. Aleksandr Anatolyevich, Nikitin D. S., Pak A. Ya. Aleksandr Yakovlevich, Rakhmatullin I. A. Ilyas Aminovich
Sumari:Title screen
The direct plasmodynamic synthesis of β-SiC ultradispersed cubic silicon carbide under the action of supersonic pulse flow of carbon-silicon electric-discharge plasma onto a copper barrier in the argon atmosphere has been realized. A powdered product with a high β-SiC content has been obtained, whose single crystals have a mean size of about 100 nm and natural crystallographic habit close to the ideal one
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2013
Matèries:
Accés en línia:http://link.springer.com/article/10.3103/S1063457613030027
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=642784
Descripció
Sumari:Title screen
The direct plasmodynamic synthesis of β-SiC ultradispersed cubic silicon carbide under the action of supersonic pulse flow of carbon-silicon electric-discharge plasma onto a copper barrier in the argon atmosphere has been realized. A powdered product with a high β-SiC content has been obtained, whose single crystals have a mean size of about 100 nm and natural crystallographic habit close to the ideal one
Режим доступа: по договору с организацией-держателем ресурса