The influence of vacancy generation at the initial stage of ion implantation; AIP Conference Proceedings; Vol. 1623 : International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russia, 3–5 September 2014
| Parent link: | AIP Conference Proceedings Vol. 1623 : International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russia, 3–5 September 2014.— 2014.— [P. 479-482] |
|---|---|
| מחבר ראשי: | Parfenova E. S. Elena Sergeevna |
| מחבר תאגידי: | Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра физики высоких технологий в машиностроении (ФВТМ) |
| מחברים אחרים: | Knyazeva A. G. Anna Georgievna |
| סיכום: | Title screen The paper presents a coupled isothermal model at the initial stage of a solid surface treatment with particle beams. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. Vacancies in the metal surface and their generation under stress are also taken into account. The kinetic law is formulated on the basis of thermodynamics of irreversible processes. The authors used numerical investigation methods. As a result, they have obtained the distributions of impurity concentration and deformations for various time moments. The authors also compare the concentration and deformation profiles with and without vacancies and study the influences of some model parameters. The effect of vacancy generation on the diffusion has been established to lead to an increase in the depth of penetration, as well as in the concentration of impurities. Режим доступа: по договору с организацией-держателем ресурса |
| שפה: | אנגלית |
| יצא לאור: |
2014
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| נושאים: | |
| גישה מקוונת: | http://dx.doi.org/10.1063/1.4901496 http://earchive.tpu.ru/handle/11683/35743 |
| פורמט: | אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641898 |
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פריטים דומים
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The Vacancy Generation Influence on the Initial Stage of Ion Implantation; Applied Mechanics and Materials; Vol. 1097 : Nanomaterials and Surface Technologies, Materials Applications
מאת: Parfenova E. S. Elena Sergeevna
יצא לאור: (2015) -
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מאת: Khan A. Asfandyar
יצא לאור: (2014) -
Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation; Coatings; Vol. 10, iss. 2
יצא לאור: (2020) -
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מאת: Parfenova E. S. Elena Sergeevna
יצא לאור: (2016) -
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מאת: Parfenova E. S. Elena Sergeevna
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