The influence of vacancy generation at the initial stage of ion implantation
| Parent link: | AIP Conference Proceedings Vol. 1623 : International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russia, 3–5 September 2014.— 2014.— [P. 479-482] |
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| Sumari: | Title screen The paper presents a coupled isothermal model at the initial stage of a solid surface treatment with particle beams. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. Vacancies in the metal surface and their generation under stress are also taken into account. The kinetic law is formulated on the basis of thermodynamics of irreversible processes. The authors used numerical investigation methods. As a result, they have obtained the distributions of impurity concentration and deformations for various time moments. The authors also compare the concentration and deformation profiles with and without vacancies and study the influences of some model parameters. The effect of vacancy generation on the diffusion has been established to lead to an increase in the depth of penetration, as well as in the concentration of impurities. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2014
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| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1063/1.4901496 http://earchive.tpu.ru/handle/11683/35743 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641898 |
MARC
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| 200 | 1 | |a The influence of vacancy generation at the initial stage of ion implantation |f E. S. Parfenova, A. G. Knyazeva | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 482 (6 tit.)] | ||
| 330 | |a The paper presents a coupled isothermal model at the initial stage of a solid surface treatment with particle beams. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. Vacancies in the metal surface and their generation under stress are also taken into account. The kinetic law is formulated on the basis of thermodynamics of irreversible processes. The authors used numerical investigation methods. As a result, they have obtained the distributions of impurity concentration and deformations for various time moments. The authors also compare the concentration and deformation profiles with and without vacancies and study the influences of some model parameters. The effect of vacancy generation on the diffusion has been established to lead to an increase in the depth of penetration, as well as in the concentration of impurities. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\4816 |t AIP Conference Proceedings | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\4814 |t Vol. 1623 : International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russia, 3–5 September 2014 |o [proceedings] |f National Research Tomsk Polytechnic University (TPU) |v [P. 479-482] |d 2014 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a генерация | |
| 610 | 1 | |a вакансии | |
| 610 | 1 | |a ионная имплантация | |
| 610 | 1 | |a поверхности | |
| 610 | 1 | |a численные методы | |
| 610 | 1 | |a деформации | |
| 610 | 1 | |a диффузия | |
| 700 | 1 | |a Parfenova |b E. S. |c chemist-technologist |c engineer of Tomsk Polytechnic University |f 1989- |g Elena Sergeevna |3 (RuTPU)RU\TPU\pers\34500 | |
| 701 | 1 | |a Knyazeva |b A. G. |c Russian physicist |c Professor of Tomsk Polytechnic University, doctor of physico-mathematical Sciences |f 1962- |g Anna Georgievna |3 (RuTPU)RU\TPU\pers\32712 |9 16597 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт физики высоких технологий (ИФВТ) |b Кафедра физики высоких технологий в машиностроении (ФВТМ) |3 (RuTPU)RU\TPU\col\18687 |
| 801 | 2 | |a RU |b 63413507 |c 20170109 |g RCR | |
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