The Method of Receiving of Surface Alloys Si-Ti System; Applied Mechanics and Materials; Vol. 682 : Innovation Technology and Economics in Engineering
| Parent link: | Applied Mechanics and Materials: Scientific Journal Vol. 682 : Innovation Technology and Economics in Engineering.— 2014.— [P. 87-90] |
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| Autor principal: | |
| Autor corporatiu: | |
| Altres autors: | , |
| Sumari: | Title screen The technique has been developed and the possibility of doping titanium by silicon to form a multilayer composite Ti (base) / Ti5Si3 (surface layer) material, which is special interesting as a high-temperature light material due to the formation of high-temperature (Tm=2400 K) of titanium silicideTi5Si3, synthesized in a single vacuum cycle during high-intensity electron beam treatment of submillisecond duration on the film (silicon) / substrate (titanium), formed by spraying silicon by electron beam. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2014
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| Col·lecció: | Material Science, Machining Technologies and Equipments in Mechanical Engineering |
| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.4028/www.scientific.net/AMM.682.87 |
| Format: | xMaterials Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641448 |
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| 200 | 1 | |a The Method of Receiving of Surface Alloys Si-Ti System |f E. Petrikova, Yu. F. Ivanov, A. Teresov | |
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| 225 | 1 | |a Material Science, Machining Technologies and Equipments in Mechanical Engineering | |
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| 330 | |a The technique has been developed and the possibility of doping titanium by silicon to form a multilayer composite Ti (base) / Ti5Si3 (surface layer) material, which is special interesting as a high-temperature light material due to the formation of high-temperature (Tm=2400 K) of titanium silicideTi5Si3, synthesized in a single vacuum cycle during high-intensity electron beam treatment of submillisecond duration on the film (silicon) / substrate (titanium), formed by spraying silicon by electron beam. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
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