Influence of Crystal Defects on the Reflectivity of the Aluminum
| Parent link: | Applied Mechanics and Materials: Scientific Journal Vol. 756 : Mechanical Engineering, Automation and Control Systems (MEACS2014).— 2015.— [P. 164-168] |
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| मुख्य लेखक: | |
| निगमित लेखक: | |
| अन्य लेखक: | , |
| सारांश: | Title screen The effect of ion-assisted deposition of the Al films on their UV reflectance is investigated in this paper. The films' reflectance is measured by a spectrophotometer. The obtained films are examined by using transmission electron microscopy (TEM), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The TEM and AFM measurements allow the determination of the size of crystallites in a film and its microstructure. The XRD analysis reveals that the films deposited with argon ion-beam assist are characterized by much higher microstress levels compared to the films deposited without ion assist. The comparison of the Al films’ reflectance measurements indicate that the films with a higher microstress level (hence, higher defect concentration) are characterized by the enhanced reflectance in the UV region. The conducted investigation shows that the defects of the Al films’ crystalline structure affect its optical properties. Режим доступа: по договору с организацией-держателем ресурса |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2015
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| श्रृंखला: | Material Engineering and Technologies |
| विषय: | |
| ऑनलाइन पहुंच: | http://dx.doi.org/10.4028/www.scientific.net/AMM.756.164 |
| स्वरूप: | इलेक्ट्रोनिक पुस्तक अध्याय |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641302 |
MARC
| LEADER | 00000nla2a2200000 4500 | ||
|---|---|---|---|
| 001 | 641302 | ||
| 005 | 20250513160304.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\6202 | ||
| 035 | |a RU\TPU\network\6199 | ||
| 090 | |a 641302 | ||
| 100 | |a 20150515a2015 k y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 105 | |a y z 100zy | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Influence of Crystal Defects on the Reflectivity of the Aluminum |f S. P. Umnov, O. Kh Asainov, A. N. Lemachko | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Material Engineering and Technologies | |
| 300 | |a Title screen | ||
| 330 | |a The effect of ion-assisted deposition of the Al films on their UV reflectance is investigated in this paper. The films' reflectance is measured by a spectrophotometer. The obtained films are examined by using transmission electron microscopy (TEM), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The TEM and AFM measurements allow the determination of the size of crystallites in a film and its microstructure. The XRD analysis reveals that the films deposited with argon ion-beam assist are characterized by much higher microstress levels compared to the films deposited without ion assist. The comparison of the Al films’ reflectance measurements indicate that the films with a higher microstress level (hence, higher defect concentration) are characterized by the enhanced reflectance in the UV region. The conducted investigation shows that the defects of the Al films’ crystalline structure affect its optical properties. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\5920 |t Applied Mechanics and Materials |o Scientific Journal | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\6028 |t Vol. 756 : Mechanical Engineering, Automation and Control Systems (MEACS2014) |o International Conference, 16‐18 October, 2014, Tomsk, Russia |o [proceedings] |f National Research Tomsk Polytechnic University (TPU) |v [P. 164-168] |d 2015 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a дефекты | |
| 610 | 1 | |a кристаллические решетки | |
| 610 | 1 | |a магнетронное распыление | |
| 610 | 1 | |a коэффициенты отражения | |
| 700 | 1 | |a Umnov |b S. P. |c physicist |c Senior researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1957- |g Sergey Pavlovich |3 (RuTPU)RU\TPU\pers\34215 | |
| 701 | 1 | |a Asainov |b O. Kh. |c physicist |c Head of the laboratory of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1957- |g Oleg Khaydarovich |3 (RuTPU)RU\TPU\pers\34632 | |
| 701 | 1 | |a Lemachko |b A. N. | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |c (2009- ) |9 26305 |
| 801 | 2 | |a RU |b 63413507 |c 20161229 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u http://dx.doi.org/10.4028/www.scientific.net/AMM.756.164 | |
| 942 | |c CF | ||