The Reactive Deposition of TiO[x] Thin Films; Advanced Materials Research; Vol. 1040 : High Technology: Research and Applications 2014 (HTRA 2014)
| Parent link: | Advanced Materials Research: Scientific Journal Vol. 1040 : High Technology: Research and Applications 2014 (HTRA 2014).— 2014.— [P. 748-752] |
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| Yhteenveto: | Title screen The article reports on the aspects of reactive deposition ultra-thin TiOx films (50 nm) by means of dual magnetron system with mirror and closed magnetic field (B field) configurations. The hysteresis effect of electrical discharge characteristics and oxygen partial pressure P(O[2]) are presented. The dual magnetron with closed B field configuration has less hysteresis peculiarities and transits back to metallic deposition mode at higher O[2] flow rate (Q). The deposition rates don’t depend on B field configuration and correlate with changing of P(O[2]) and discharge voltage. The refractive spectra and energy of band gap, which are measured by UV-visible spectrophotometry and ellipsometry (lambda=632.8 nm) methods, have strong dependence on Q(O[2]). Режим доступа: по договору с организацией-держателем ресурса |
| Kieli: | englanti |
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2014
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| Sarja: | Technologies of Electrophysical Methods of Materials Treatment |
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| Linkit: | http://dx.doi.org/10.4028/www.scientific.net/AMR.1040.748 |
| Aineistotyyppi: | Elektroninen Kirjan osa |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641110 |
| Yhteenveto: | Title screen The article reports on the aspects of reactive deposition ultra-thin TiOx films (50 nm) by means of dual magnetron system with mirror and closed magnetic field (B field) configurations. The hysteresis effect of electrical discharge characteristics and oxygen partial pressure P(O[2]) are presented. The dual magnetron with closed B field configuration has less hysteresis peculiarities and transits back to metallic deposition mode at higher O[2] flow rate (Q). The deposition rates don’t depend on B field configuration and correlate with changing of P(O[2]) and discharge voltage. The refractive spectra and energy of band gap, which are measured by UV-visible spectrophotometry and ellipsometry (lambda=632.8 nm) methods, have strong dependence on Q(O[2]). Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.4028/www.scientific.net/AMR.1040.748 |