Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing
| Parent link: | AIP Conference Proceedings Vol. 1623 : International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russia, 3–5 September 2014.— 2014.— [P. 327-330] |
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| Autor Corporativo: | |
| Outros Autores: | , , , , , , , , |
| Resumo: | Title screen Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocation-type defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of deltaT=20°C-180°C are low-angle boundaries enriched by impurities. At deltaT=180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ. Режим доступа: по договору с организацией-держателем ресурса |
| Publicado em: |
2014
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| Assuntos: | |
| Acesso em linha: | http://dx.doi.org/10.1063/1.4901488 http://earchive.tpu.ru/handle/11683/35670 |
| Formato: | Recurso Eletrônico Capítulo de Livro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641049 |
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| 200 | 1 | |a Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing |f P. V. Kuznetsov, Yu. P. Mironov, A. I. Tolmachev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 330 (10 tit.)] | ||
| 330 | |a Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocation-type defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of deltaT=20°C-180°C are low-angle boundaries enriched by impurities. At deltaT=180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\4816 |t AIP Conference Proceedings | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\4814 |t Vol. 1623 : International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russia, 3–5 September 2014 |o [proceedings] |f National Research Tomsk Polytechnic University (TPU) |v [P. 327-330] |d 2014 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a submicrocrystalline structure | |
| 610 | 1 | |a subgrain | |
| 610 | 1 | |a grain boundary | |
| 610 | 1 | |a low-angle boundary | |
| 610 | 1 | |a positron annihilation | |
| 610 | 1 | |a dislocations | |
| 610 | 1 | |a vacancy cluster | |
| 610 | 1 | |a annealing | |
| 610 | 1 | |a аннигиляция | |
| 610 | 1 | |a позитроны | |
| 610 | 1 | |a спектроскопия | |
| 610 | 1 | |a дефекты | |
| 610 | 1 | |a никель | |
| 610 | 1 | |a отжиг | |
| 610 | 1 | |a субмикрокристаллические структуры | |
| 701 | 1 | |a Kuznetsov |b P. V. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1952- |g Pavel Viktorovich |3 (RuTPU)RU\TPU\pers\34499 |9 17882 | |
| 701 | 1 | |a Mironov |b Yu. P. | |
| 701 | 1 | |a Tolmachev |b A. I. | |
| 701 | 1 | |a Rakhmatulina |b T. V. | |
| 701 | 1 | |a Bordulev |b Yu. S. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Yuri Sergeevich |3 (RuTPU)RU\TPU\pers\31883 | |
| 701 | 1 | |a Laptev |b R. S. |c physicist, specialist in the field of non-destructive testing |c Associate Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1987- |g Roman Sergeevich |y Tomsk |3 (RuTPU)RU\TPU\pers\31884 |9 15956 | |
| 701 | 1 | |a Lider |b A. M. |c Physicist |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1976-2025 |g Andrey Markovich |y Tomsk |3 (RuTPU)RU\TPU\pers\30400 |9 14743 | |
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| 701 | 1 | |a Korznikov |b A. V. | |
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| 856 | 4 | |u http://dx.doi.org/10.1063/1.4901488 | |
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