Positron spectroscopy of defects in submicrocrystalline nickel after low-temperature annealing
| Parent link: | Physics of the Solid State: Scientific Journal Vol. 57, iss. 2.— 2015.— [P. 219-228] |
|---|---|
| Yhteisötekijä: | |
| Muut tekijät: | , , , , , , |
| Yhteenveto: | Title screen Using the method of measuring the positron lifetime spectra and Doppler broadening annihilation line spectroscopy, the annealing of defects in submicrocrystalline nickel produced by equal channel angular pressing has been studied. In as-prepared samples, the positrons are trapped by dislocation defects and vacancy complexes inside crystallites. The size of vacancy complexes decreases with increasing annealing temperature in the interval deltaT = 20–300°C. However, at T = 360°C, the complexes start growing again. The dependence of S-parameter on W-parameter derived from the Doppler broadening spectroscopy has two parts with different inclinations to axes that correspond to different types of primary centers of positron trapping in submicrocrystalline nickel. It has been elucidated that, at recovery stage in the temperature interval deltaT = 20–180°C, the main centers of positron trapping are low-angle boundaries enriched by impurities, while at in situ recrystallization stage in the temperature interval deltaT = 180–360°C, the primary centers of positron trapping are low-angle boundaries. Режим доступа: по договору с организацией-держателем ресурса |
| Kieli: | englanti |
| Julkaistu: |
2015
|
| Aiheet: | |
| Linkit: | http://dx.doi.org/10.1134/S1063783415020225 |
| Aineistotyyppi: | Elektroninen Kirjan osa |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641047 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 641047 | ||
| 005 | 20251028071620.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\5925 | ||
| 090 | |a 641047 | ||
| 100 | |a 20150507d2015 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Positron spectroscopy of defects in submicrocrystalline nickel after low-temperature annealing |f P. V. Kuznetsov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 228 (36 tit.)] | ||
| 330 | |a Using the method of measuring the positron lifetime spectra and Doppler broadening annihilation line spectroscopy, the annealing of defects in submicrocrystalline nickel produced by equal channel angular pressing has been studied. In as-prepared samples, the positrons are trapped by dislocation defects and vacancy complexes inside crystallites. The size of vacancy complexes decreases with increasing annealing temperature in the interval deltaT = 20–300°C. However, at T = 360°C, the complexes start growing again. The dependence of S-parameter on W-parameter derived from the Doppler broadening spectroscopy has two parts with different inclinations to axes that correspond to different types of primary centers of positron trapping in submicrocrystalline nickel. It has been elucidated that, at recovery stage in the temperature interval deltaT = 20–180°C, the main centers of positron trapping are low-angle boundaries enriched by impurities, while at in situ recrystallization stage in the temperature interval deltaT = 180–360°C, the primary centers of positron trapping are low-angle boundaries. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Physics of the Solid State |o Scientific Journal | ||
| 463 | |t Vol. 57, iss. 2 |v [P. 219-228] |d 2015 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Kuznetsov |b P. V. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1952- |g Pavel Viktorovich |3 (RuTPU)RU\TPU\pers\34499 |9 17882 | |
| 701 | 1 | |a Mironov |b Yu. P. | |
| 701 | 1 | |a Tolmachev |b A. I. | |
| 701 | 1 | |a Bordulev |b Yu. S. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Yuri Sergeevich |3 (RuTPU)RU\TPU\pers\31883 | |
| 701 | 1 | |a Laptev |b R. S. |c physicist, specialist in the field of non-destructive testing |c Associate Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1987- |g Roman Sergeevich |y Tomsk |3 (RuTPU)RU\TPU\pers\31884 |9 15956 | |
| 701 | 1 | |a Lider |b A. M. |c Physicist |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1976-2025 |g Andrey Markovich |y Tomsk |3 (RuTPU)RU\TPU\pers\30400 |9 14743 | |
| 701 | 1 | |a Korznikov |b A. V. | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Физико-технический институт (ФТИ) |b Кафедра общей физики (ОФ) |3 (RuTPU)RU\TPU\col\18734 |
| 801 | 2 | |a RU |b 63413507 |c 20150507 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1134/S1063783415020225 | |
| 942 | |c CF | ||