The Influence of Dislocation Junctions on Accumulation of Dislocations in Strained FCC – Single Crystals; Advanced Materials Research; Vol. 1013 : Structure and Properties of Metals at DifferentEnergy Effects and Treatment Technologies
| Parent link: | Advanced Materials Research: Scientific Journal Vol. 1013 : Structure and Properties of Metals at DifferentEnergy Effects and Treatment Technologies.— 2014.— [P. 272-279] |
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| Korporativní autor: | |
| Další autoři: | , , , , |
| Shrnutí: | Title screen Dislocation junctions, formed as a result of dislocation reactions, affect the plastic strain process, at least, for two reasons. First of all, junctions serve as barriers to shear-forming dislocations and restrict their path, therefore, the size of the shear zone. Sizes of the shear zone are determined by the density of reacting dislocations in non-coplanar slip systems, forming long enough barriers in the form of dislocation junctions. Secondly, non-breaking dislocation junctions are accumulated inside the shear zone, which leads to an increase in the intensity of the dislocation density accumulation.The present work is devoted to the study of the influence of dislocation junctions on accumulation of the density of dislocation debris (debris junctions) due to formation of stable junctions. For this purpose, the probability density function of lengths in non-breaking junctions is calculated. The model of dislocation interactions, built by the authors of the paper for FCC single crystals, is used. Режим доступа: по договору с организацией-держателем ресурса |
| Jazyk: | angličtina |
| Vydáno: |
2014
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| Témata: | |
| On-line přístup: | http://dx.doi.org/10.4028/www.scientific.net/AMR.1013.272 |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640934 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 640934 | ||
| 005 | 20250602171546.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\5812 | ||
| 035 | |a RU\TPU\network\5807 | ||
| 090 | |a 640934 | ||
| 100 | |a 20150505d2014 k||y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a US | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a The Influence of Dislocation Junctions on Accumulation of Dislocations in Strained FCC – Single Crystals |f V. Starenchenko [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 330 | |a Dislocation junctions, formed as a result of dislocation reactions, affect the plastic strain process, at least, for two reasons. First of all, junctions serve as barriers to shear-forming dislocations and restrict their path, therefore, the size of the shear zone. Sizes of the shear zone are determined by the density of reacting dislocations in non-coplanar slip systems, forming long enough barriers in the form of dislocation junctions. Secondly, non-breaking dislocation junctions are accumulated inside the shear zone, which leads to an increase in the intensity of the dislocation density accumulation.The present work is devoted to the study of the influence of dislocation junctions on accumulation of the density of dislocation debris (debris junctions) due to formation of stable junctions. For this purpose, the probability density function of lengths in non-breaking junctions is calculated. The model of dislocation interactions, built by the authors of the paper for FCC single crystals, is used. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\4598 |t Advanced Materials Research |o Scientific Journal | |
| 463 | |t Vol. 1013 : Structure and Properties of Metals at DifferentEnergy Effects and Treatment Technologies |o The International Scientific Workshop, 29-30 September, 2014, Tomsk, Russia |o [proceedings] |v [P. 272-279] |d 2014 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a монокристаллы | |
| 610 | 1 | |a деформирование | |
| 701 | 1 | |a Starenchenko |b V. A. |g Vladimir Aleksandrovich | |
| 701 | 1 | |a Cherepanov |b D. N. |c physicist |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1969- |g Dmitry Nikolaevich |3 (RuTPU)RU\TPU\pers\36247 | |
| 701 | 1 | |a Kurinnaya |b R. | |
| 701 | 1 | |a Zgolich |b M. | |
| 701 | 1 | |a Zgolich |b M. | |
| 701 | 1 | |a Selivanikova |b O. V. |c specialist in the field of nuclear physics |c Senior Lecturer of Tomsk Polytechnic University |f 1977- |g Olga Valerievna |3 (RuTPU)RU\TPU\pers\34251 |9 17782 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Физико-технический институт (ФТИ) |b Кафедра физико-энергетических установок (№ 21) (ФЭУ) |3 (RuTPU)RU\TPU\col\18730 |
| 801 | 2 | |a RU |b 63413507 |c 20160301 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u http://dx.doi.org/10.4028/www.scientific.net/AMR.1013.272 | |
| 942 | |c CF | ||