Features of F[2] Centers Accumulation in Oxygen-Containing LiF Crystals; Advanced Materials Research : Advanced materials, synthesis, development and application; Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013)

Features of F[2] Centers Accumulation in Oxygen-Containing LiF Crystals

Bibliographic Details
Parent link:	Advanced Materials Research : Advanced materials, synthesis, development and application: Scientific Journal Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013).— 2014.— [P. 62-67]
Main Author:	Lisitsyna L. A.
Corporate Author:	Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Other Authors:	Kassymkanova R., Lisitsyn V. M. Viktor Mikhailovich
Summary:	Title screen A mechanism for correlated formation of intrinsic defects F[2] centers and impurity hole centers with hydrogen bond in oxygen-containing LiF crystals is suggested. Режим доступа: по договору с организацией-держателем ресурса
Language:	English
Published:	2014
Series:	Diagnostics and Engineering of Novel Materials
Subjects:	электронный ресурс труды учёных ТПУ накопление наноразмерные частицы кристаллы
Online Access:	http://dx.doi.org/10.4028/www.scientific.net/AMR.880.62
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640661

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