Features of F[2] Centers Accumulation in Oxygen-Containing LiF Crystals; Advanced Materials Research : Advanced materials, synthesis, development and application; Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013)
| Parent link: | Advanced Materials Research : Advanced materials, synthesis, development and application: Scientific Journal Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013).— 2014.— [P. 62-67] |
|---|---|
| Autore principale: | |
| Ente Autore: | |
| Altri autori: | , |
| Riassunto: | Title screen A mechanism for correlated formation of intrinsic defects F[2] centers and impurity hole centers with hydrogen bond in oxygen-containing LiF crystals is suggested. Режим доступа: по договору с организацией-держателем ресурса |
| Lingua: | inglese |
| Pubblicazione: |
2014
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| Serie: | Diagnostics and Engineering of Novel Materials |
| Soggetti: | |
| Accesso online: | http://dx.doi.org/10.4028/www.scientific.net/AMR.880.62 |
| Natura: | Elettronico Capitolo di libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640661 |
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