Features of F[2] Centers Accumulation in Oxygen-Containing LiF Crystals; Advanced Materials Research : Advanced materials, synthesis, development and application; Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013)
| Parent link: | Advanced Materials Research : Advanced materials, synthesis, development and application: Scientific Journal Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013).— 2014.— [P. 62-67] |
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| Andre forfattere: | , |
| Summary: | Title screen A mechanism for correlated formation of intrinsic defects F[2] centers and impurity hole centers with hydrogen bond in oxygen-containing LiF crystals is suggested. Режим доступа: по договору с организацией-держателем ресурса |
| Sprog: | engelsk |
| Udgivet: |
2014
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| Serier: | Diagnostics and Engineering of Novel Materials |
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| Online adgang: | http://dx.doi.org/10.4028/www.scientific.net/AMR.880.62 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640661 |
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| 200 | 1 | |a Features of F[2] Centers Accumulation in Oxygen-Containing LiF Crystals |f L. A. Lisitsyna, R. Kassymkanova, V. M. Lisitsyn | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Diagnostics and Engineering of Novel Materials | |
| 300 | |a Title screen | ||
| 330 | |a A mechanism for correlated formation of intrinsic defects F[2] centers and impurity hole centers with hydrogen bond in oxygen-containing LiF crystals is suggested. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\4598 |t Advanced Materials Research : Advanced materials, synthesis, development and application |o Scientific Journal | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\4601 |t Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013) |o The Xth International Conference, April 23-26, 2013, Tomsk, Russia |o [proceedings] |v [P. 62-67] |d 2014 | |
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