Resistance of LEDs Based on AlGaInP Heterostructures to Irradiation by Fast Neutrons; Journal of Chemistry and Chemical Engineering; Vol. 7, № 5
| Parent link: | Journal of Chemistry and Chemical Engineering: Scientific Journal.— , 2011- Vol. 7, № 5.— 2013.— [P. 409-413] |
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| Autor corporatiu: | , |
| Altres autors: | , |
| Sumari: | Title screen The change of light output power of LEDs based on AlGaInP heterostructures with multiple quantum wells (590 nm and 630 nm) under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current (operating current density) and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance. |
| Idioma: | anglès |
| Publicat: |
2013
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| Accés en línia: | http://www.davidpublishing.com/davidpublishing/Upfile/6/4/2013/2013060405850686.pdf |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640393 |