Gamma degradation of light-emitting diodes based on heterostructured AlGaInP; The 7th International Forum on Strategic Technology (IFOST-2012), September 18-21, 2012, Tomsk

Gamma degradation of light-emitting diodes based on heterostructured AlGaInP; The 7th International Forum on Strategic Technology (IFOST-2012), September 18-21, 2012, Tomsk

Bibliographic Details
Parent link:The 7th International Forum on Strategic Technology (IFOST-2012), September 18-21, 2012, Tomsk.— 2012.— [4 p.]
Main Author: Orlova K. N. Kseniya Nikolaevna
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра естественного научного образования (ЕНО), Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра безопасности жизнедеятельности, экологии и физического воспитания (БЖДЭФВ)
Other Authors: Gradoboev A. V. Aleksandr Vasilyevich, Asanov I. A.
Summary:Title screen
Gamma degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 590 nm region. The process of degradation light output power is shown in two stages. Light-current and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells has possible to distinguished areas of weak and strong injection of electrons into the active region of the diodes by measuring light output. The value of the light output power of LEDs irradiated 60Co gamma-rays in a passive mode decreases with increasing radiation dose, while power of degradation of light output is directly proportional to dose and fluency and is inversely proportional to the operating current at which it measured. With reduction of radiation dose differences between the region of strong injection and weak injection increases. Comparison of the research results made of different semiconductor structures suggests that the stages of degradationprocesses is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2012
Subjects:
электронный ресурс
труды учёных ТПУ
светодиоды
квантовые ямы
гетероструктуры
AlGaInP
radiation sensitivity
light-emitting diodes with quantum wells
heterostructures
Online Access:http://dx.doi.org/10.1109/IFOST.2012.6357528
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640366

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