Technology for Silicon NTD Using Pool-Type Research Reactors

Technology for Silicon NTD Using Pool-Type Research Reactors

Bibliographic Details
Parent link:Advanced Materials Research : Radiation and nuclear techniques in material science: Scientific Journal
Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014).— 2015.— [P. 333-337]
Main Author: Varlachev V. A. Valery Aleksandrovich
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора
Other Authors: Emets E. G. Evgeny Gennadievich, Butko Ya. A. Yana Aleksandrovna
Summary:Title screen
Neutron transmutation doped silicon is an important material for electronics that is based on the conversion of 30}Si into {31}P through a {30}Si (n,γ) → {31}Si reaction taking place during the neutron irradiation and followed by the beta decay of {31}Si into {31}P. The production of such silicon requires high homogeneity. The paper describes a new facility for NTD of silicon ingots of up to 5 inches in diameter and presents the experimental results that were obtained at IRT-T research nuclear reactor.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2015
Series:Nuclear Engineering and Fuel Cycles
Subjects:
электронный ресурс
труды учёных ТПУ
потоки
нейтроны
ядерные реакторы
Online Access:http://dx.doi.org/10.4028/www.scientific.net/AMR.1084.333
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640342

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