Technology for Silicon NTD Using Pool-Type Research Reactors; Advanced Materials Research : Radiation and nuclear techniques in material science; Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014)
| Parent link: | Advanced Materials Research : Radiation and nuclear techniques in material science: Scientific Journal Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014).— 2015.— [P. 333-337] |
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| Egile nagusia: | |
| Erakunde egilea: | |
| Beste egile batzuk: | , |
| Gaia: | Title screen Neutron transmutation doped silicon is an important material for electronics that is based on the conversion of 30}Si into {31}P through a {30}Si (n,γ) → {31}Si reaction taking place during the neutron irradiation and followed by the beta decay of {31}Si into {31}P. The production of such silicon requires high homogeneity. The paper describes a new facility for NTD of silicon ingots of up to 5 inches in diameter and presents the experimental results that were obtained at IRT-T research nuclear reactor. Режим доступа: по договору с организацией-держателем ресурса |
| Hizkuntza: | ingelesa |
| Argitaratua: |
2015
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| Saila: | Nuclear Engineering and Fuel Cycles |
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| Sarrera elektronikoa: | http://dx.doi.org/10.4028/www.scientific.net/AMR.1084.333 |
| Formatua: | Baliabide elektronikoa Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640342 |