Formation of the Irradiation Zone for Neutron Transmutation Doping Using the Pool-Type Research Reactor; Advanced Materials Research : Radiation and nuclear techniques in material science; Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014)

Bibliografiske detaljer
Parent link:Advanced Materials Research : Radiation and nuclear techniques in material science: Scientific Journal
Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014).— 2015.— [P. 309-312]
Institution som forfatter: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора
Andre forfattere: Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, Butko Ya. A. Yana Aleksandrovna
Summary:Title screen
The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots.
Режим доступа: по договору с организацией-держателем ресурса
Sprog:engelsk
Udgivet: 2015
Serier:Nuclear Engineering and Fuel Cycles
Fag:
Online adgang:http://dx.doi.org/10.4028/www.scientific.net/AMR.1084.309
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640331