Formation of the Irradiation Zone for Neutron Transmutation Doping Using the Pool-Type Research Reactor; Advanced Materials Research : Radiation and nuclear techniques in material science; Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014)

Podrobná bibliografie
Parent link:Advanced Materials Research : Radiation and nuclear techniques in material science: Scientific Journal
Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014).— 2015.— [P. 309-312]
Korporativní autor: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора
Další autoři: Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, Butko Ya. A. Yana Aleksandrovna
Shrnutí:Title screen
The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots.
Режим доступа: по договору с организацией-держателем ресурса
Jazyk:angličtina
Vydáno: 2015
Edice:Nuclear Engineering and Fuel Cycles
Témata:
On-line přístup:http://dx.doi.org/10.4028/www.scientific.net/AMR.1084.309
Médium: Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640331