Formation of the Irradiation Zone for Neutron Transmutation Doping Using the Pool-Type Research Reactor; Advanced Materials Research : Radiation and nuclear techniques in material science; Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014)

Dades bibliogràfiques
Parent link:Advanced Materials Research : Radiation and nuclear techniques in material science: Scientific Journal
Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014).— 2015.— [P. 309-312]
Autor corporatiu: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора
Altres autors: Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, Butko Ya. A. Yana Aleksandrovna
Sumari:Title screen
The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2015
Col·lecció:Nuclear Engineering and Fuel Cycles
Matèries:
Accés en línia:http://dx.doi.org/10.4028/www.scientific.net/AMR.1084.309
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640331