Formation of the Irradiation Zone for Neutron Transmutation Doping Using the Pool-Type Research Reactor

Bibliografische gegevens
Parent link:Advanced Materials Research : Radiation and nuclear techniques in material science: Scientific Journal
Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014).— 2015.— [P. 309-312]
Coauteur: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора
Andere auteurs: Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, Butko Ya. A. Yana Aleksandrovna
Samenvatting:Title screen
The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots.
Режим доступа: по договору с организацией-держателем ресурса
Gepubliceerd in: 2015
Reeks:Nuclear Engineering and Fuel Cycles
Onderwerpen:
Online toegang:http://dx.doi.org/10.4028/www.scientific.net/AMR.1084.309
Formaat: Elektronisch Hoofdstuk
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640331

MARC

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330 |a The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots. 
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