Formation of the Irradiation Zone for Neutron Transmutation Doping Using the Pool-Type Research Reactor; Advanced Materials Research : Radiation and nuclear techniques in material science; Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014)
| Parent link: | Advanced Materials Research : Radiation and nuclear techniques in material science: Scientific Journal Vol. 1084 : Physical-Technical Problems of Nuclear Science, Energy Generation, and Power Industry (PTPAI -2014).— 2015.— [P. 309-312] |
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| Autor Corporativo: | |
| Outros autores: | , , , |
| Summary: | Title screen The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | inglés |
| Publicado: |
2015
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| Series: | Nuclear Engineering and Fuel Cycles |
| Subjects: | |
| Acceso en liña: | http://dx.doi.org/10.4028/www.scientific.net/AMR.1084.309 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640331 |
| Summary: | Title screen The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.4028/www.scientific.net/AMR.1084.309 |