The research of characteristics of multichannel GaAs detectors
| Parent link: | 2011 International Siberian Conference on Control and Communications (SIBCON), Russia, Krasnoyarsk, September 15−16, 2011: proceedings. [P. 247 - 248].— , 2011 |
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| Other Authors: | , , , |
| Summary: | Title screen In this paper the results of multichannel GaAs detectors testing in integral mode are presented. It is shown that for x-ray quanta at the energy range 40-75 keV and exposure dose more than 1,5 mR the noise characteristics of the detectors are mostly depends on photon noise. It is experimentally proved that negative potential on irradiated contact and an inclination of detectors at a small angle to a direction of falling of radiation allow to increase sensitivity of detectors considerably. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | http://dx.doi.org/10.1109/SIBCON.2011.6072645 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639939 |
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| 200 | 1 | |a The research of characteristics of multichannel GaAs detectors |f I. F. Nam [et al.] | |
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| 300 | |a Title screen | ||
| 330 | |a In this paper the results of multichannel GaAs detectors testing in integral mode are presented. It is shown that for x-ray quanta at the energy range 40-75 keV and exposure dose more than 1,5 mR the noise characteristics of the detectors are mostly depends on photon noise. It is experimentally proved that negative potential on irradiated contact and an inclination of detectors at a small angle to a direction of falling of radiation allow to increase sensitivity of detectors considerably. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 463 | |t 2011 International Siberian Conference on Control and Communications (SIBCON), Russia, Krasnoyarsk, September 15−16, 2011 |o proceedings |v [P. 247 - 248] |d 2011 | ||
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| 701 | 1 | |a Nam |b I. F. |c specialist in the field of electrophysics |c Associate Professor of Tomsk Polytechnic University,candidate of technical sciences |f 1981- |g Irina Feliksovna |3 (RuTPU)RU\TPU\pers\33676 |9 17307 | |
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