X-ray production simulation of an electron beam recycled through a betatron's internal target

Bibliografiske detaljer
Parent link:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal
Vol. 145, iss. 1-2.— 1998.— [P. 244-252]
Andre forfattere: Kaplin V. V. Valeriy Viktorovich, Lombardo L. W., Mikhalchuk A. A. Aleksandr Alexandrovich, Piestrup M. A., Uglov S. R. Sergey Romanovich
Summary:Title screen
An analysis of the circulating dynamics of 6 and 35 MeV electron beams in betatron chambers with quasi-transparent internal targets has been done by means of computer simulation. The spatial and angular distributions of the electron trajectories were studied as the electrons made multiple passes through the thin targets. The beam intensities were observed as a function of the number of passes through 0.01, 0.02, 0.05, and 0.1 mm thick silicon targets. The mean number of passes that an electron makes was determined for each combination of target thickness and beam energy. Using the data obtained from the simulation, the spectral and angular distributions of parametric X-radiation have been calculated for electrons recycled through silicon crystals.
Режим доступа: по договору с организацией-держателем ресурса
Sprog:engelsk
Udgivet: 1998
Fag:
Online adgang:http://www.sciencedirect.com/science/article/pii/S0168583X98003772
http://elibrary.ru/item.asp?id=13280532
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639901

MARC

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200 1 |a X-ray production simulation of an electron beam recycled through a betatron's internal target  |f V. V. Kaplin [et al.] 
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300 |a Title screen 
330 |a An analysis of the circulating dynamics of 6 and 35 MeV electron beams in betatron chambers with quasi-transparent internal targets has been done by means of computer simulation. The spatial and angular distributions of the electron trajectories were studied as the electrons made multiple passes through the thin targets. The beam intensities were observed as a function of the number of passes through 0.01, 0.02, 0.05, and 0.1 mm thick silicon targets. The mean number of passes that an electron makes was determined for each combination of target thickness and beam energy. Using the data obtained from the simulation, the spectral and angular distributions of parametric X-radiation have been calculated for electrons recycled through silicon crystals. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms  |o Scientific Journal 
463 |t Vol. 145, iss. 1-2  |v [P. 244-252]  |d 1998 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
701 1 |a Kaplin  |b V. V.  |c physicist  |c senior research fellow at Tomsk Polytechnic University  |f 1947-  |g Valeriy Viktorovich  |3 (RuTPU)RU\TPU\pers\31532 
701 1 |a Lombardo  |b L. W. 
701 1 |a Mikhalchuk  |b A. A.  |c mathematician  |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences  |f 1954-  |g Aleksandr Alexandrovich  |3 (RuTPU)RU\TPU\pers\31925 
701 1 |a Piestrup  |b M. A. 
701 1 |a Uglov  |b S. R.  |c physicist  |c Leading Researcher of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences  |f 1958-  |g Sergey Romanovich  |3 (RuTPU)RU\TPU\pers\31533  |9 15694 
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