Features of the exciton spectra of CdS(O) single crystals; Semiconductors; Vol. 46, iss. 13
| Parent link: | Semiconductors Vol. 46, iss. 13.— 2012.— [P. 1562-1567] |
|---|---|
| Autor corporatiu: | |
| Altres autors: | , , , |
| Sumari: | Title screen The exciton cathodoluminescence spectra of CdS(O) single crystals are investigated depending on the depth (0.3-125 μm). It is found that the CdS(O) solid solution is stable in the bulk, where the crystal lattice provides the compensation of strains due to the isoelectronic impurity OS. Near the surface (to 0.5 μm), the CdS(O) solid solution can lose oxygen when forming CdO or SO2. The stimulated radiation wavelength of the CdS(O) crystals depends on the OS concentration in the bulk, which corresponds to the data of analyses. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2012
|
| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1134/S1063782612130143 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639565 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 639565 | ||
| 005 | 20250217142922.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\4052 | ||
| 090 | |a 639565 | ||
| 100 | |a 20150317d2012 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a US | ||
| 135 | |a drnn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Features of the exciton spectra of CdS(O) single crystals |f N. K. Morozova [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 1567 (20 tit.)] | ||
| 330 | |a The exciton cathodoluminescence spectra of CdS(O) single crystals are investigated depending on the depth (0.3-125 μm). It is found that the CdS(O) solid solution is stable in the bulk, where the crystal lattice provides the compensation of strains due to the isoelectronic impurity OS. Near the surface (to 0.5 μm), the CdS(O) solid solution can lose oxygen when forming CdO or SO2. The stimulated radiation wavelength of the CdS(O) crystals depends on the OS concentration in the bulk, which corresponds to the data of analyses. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Semiconductors | ||
| 463 | |t Vol. 46, iss. 13 |v [P. 1562-1567] |d 2012 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Morozova |b N. K. | |
| 701 | 1 | |a Danilevich |b N. D. | |
| 701 | 1 | |a Oleshko |b V. I. |c specialist in the field of lightning engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1948- |g Vladimir Ivanovich |3 (RuTPU)RU\TPU\pers\33783 |9 17381 | |
| 701 | 1 | |a Vil'chinskaya (Vilchinskaya) |b S. S. |c specialist in the field of laser and light technology |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1976- |g Svetlana Sergeevna |3 (RuTPU)RU\TPU\pers\33905 |9 17478 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт физики высоких технологий (ИФВТ) |b Кафедра лазерной и световой техники (ЛиСТ) |3 (RuTPU)RU\TPU\col\18690 |
| 801 | 2 | |a RU |b 63413507 |c 20150317 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1134/S1063782612130143 | |
| 942 | |c CF | ||